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          首頁
                >NVMFD030N06C>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          NVMFD030N06C
          MOSFET - Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7 m, 19 A
          
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFWD030N06C ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free, Ha
          文件：253.94 Kbytes 頁數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVMFD030N06CT1G
          絲?。?a target="_blank" title="Marking" href="/30dn6c/marking.html">30DN6C；Package：SO-8FL；MOSFET - Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7 m, 19 A
          
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFWD030N06C ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free, Ha
          文件：253.94 Kbytes 頁數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVMFD030N06C
          Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7 mΩ, 19 A
          Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.  ? Small Footprint (5x6 mm)\n? Compact Design\n? Low RDS(on)\n? Minimize Conduction Losses\n? Low QG and Capacitance\n? Minimize Driver Losses\n? NVMFWD016N06C ? Wettable Flank Option\n? Enhanced OpticalInspection\n? AEC?Q101 Qualified and PPAP Capable\n? Automotive qualified\n? These Devices are Pb-;
          ONSEMI
          安森美半導(dǎo)體
          

          NVTFS030N06C
          MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A
          
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVTFWS030N06C ? Wettable Flank Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Fre
          文件：281.65 Kbytes 頁數(shù)：8 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVTFS030N06CTAG
          MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A
          
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVTFWS030N06C ? Wettable Flank Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Fre
          文件：281.65 Kbytes 頁數(shù)：8 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          NVTFWS030N06CTAG
          MOSFET - Power, Single N-Channel, 8FL 60 V, 29.7 m, 19 A
          
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVTFWS030N06C ? Wettable Flank Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Fre
          文件：281.65 Kbytes 頁數(shù)：8 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Pb-free：
            Pb
          • AEC Qualified：
            A
          • Halide free：
            H
          • PPAP Capablee：
            P
          • Status：
            Active
          • Channel Polarity：
            N-Channel
          • Configuration：
            Dual
          • V(BR)DSS Min (V)：
            60
          • VGS Max (V)：
            ±20
          • VGS(th) Max (V)：
            4
          • ID Max (A)：
            19
          • PD Max (W)：
            23
          • RDS(on) Max @ VGS = 10 V(mΩ)：
            29.7
          • Qg Typ @ VGS = 10 V (nC)：
            4.7
          • Ciss Typ (pF)：
            255
          • Package Type：
            SO-8FL Dual/DFN-8
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價格
          
                
          



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          ON
          		

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          onsemi
          		

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          8-PowerTDFN
          		

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          更多NVMFD030N06C供應(yīng)商
            更新時間2026-1-21 13:01:00
        
          
        
          
          
          
            
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