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    首頁
                >NVMFD020N06C>規(guī)格書列表
                
    
            
    
                
    
                    
    型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    NVMFD020N06C
    MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFWD020N06C ? Wettable Flank Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free, Hal
    文件：254.21 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVMFD020N06CT1G
    絲?。?a target="_blank" title="Marking" href="/20dn6c/marking.html">20DN6C；Package：SO8FL；MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFWD020N06C ? Wettable Flank Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free, Hal
    文件：254.21 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVMFD020N06C
    Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 16.3 mΩ, 32 A
    Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.  ? Small Footprint (5x6 mm)\n? Compact Design\n? Low RDS(on)\n? Minimize Conduction Losses\n? Low QG and Capacitance\n? Minimize Driver Losses\n? NVMFWD016N06C ? Wettable Flank Option\n? Enhanced OpticalInspection\n? AEC?Q101 Qualified and PPAP Capable\n? Automotive qualified\n? These Devices are Pb-;
    ONSEMI
    安森美半導(dǎo)體
    

    NVMFS020N06C
    MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A
    
Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFWS020N06C ? Wettable Flank Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free, Hal
    文件：187.41 Kbytes 頁數(shù)：7 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVTFS020N06C
    MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVTFWS020N06C ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Fr
    文件：280.16 Kbytes 頁數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    NVTFS020N06CTAG
    MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A
    
Features
? Small Footprint (3.3 x 3.3 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVTFWS020N06C ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Fr
    文件：280.16 Kbytes 頁數(shù)：8 Pages
    ONSEMI
    安森美半導(dǎo)體
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Pb-free：
      Pb
    • AEC Qualified：
      A
    • Halide free：
      H
    • PPAP Capablee：
      P
    • Status：
      Active
    • Channel Polarity：
      N-Channel
    • Configuration：
      Dual
    • V(BR)DSS Min (V)：
      60
    • VGS Max (V)：
      ±20
    • VGS(th) Max (V)：
      4
    • ID Max (A)：
      27
    • PD Max (W)：
      31
    • RDS(on) Max @ VGS = 10 V(mΩ)：
      20.3
    • Qg Typ @ VGS = 10 V (nC)：
      5.8
    • Ciss Typ (pF)：
      355
    • Package Type：
      SO-8FL Dual/DFN-8
    
            
    
        
    
            
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            更新時(shí)間2026-1-22 14:16:00
        
    
        
    
          
    
            
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