| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is 文件：187.06 Kbytes 頁(yè)數(shù)：14 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is 文件：187.06 Kbytes 頁(yè)數(shù)：14 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Dual operational transconductance amplifier DESCRIPTION The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit p 文件：298.78 Kbytes 頁(yè)數(shù)：13 Pages | PHI PHI | PHI | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is 文件：187.06 Kbytes 頁(yè)數(shù)：14 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package 文件：351.15 Kbytes 頁(yè)數(shù)：8 Pages | CEL | CEL | ||
SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 文件：290.22 Kbytes 頁(yè)數(shù)：11 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/a2/marking.html">A2；Package：79A；SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 文件：290.22 Kbytes 頁(yè)數(shù)：11 Pages | RENESAS 瑞薩 | RENESAS | ||
絲印：A2；Package：79A；SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 文件：290.22 Kbytes 頁(yè)數(shù)：11 Pages | RENESAS 瑞薩 | RENESAS | ||
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package 文件：351.15 Kbytes 頁(yè)數(shù)：8 Pages | CEL | CEL | ||
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET DESCRIPTION NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 文件：390.12 Kbytes 頁(yè)數(shù)：9 Pages | CEL | CEL |
替換型號(hào)
- 149255
- 221-Z9020
- 276-1740
- 3100001
- 569-0320-831
- 569-0540-623
- 723
- 723C
- 723CJ
- AMX3548
- CA723CE
- CA723E
- EA33X8469
- ECG923D
- GEIC-260
- HA17723G
- IC-20
- IC-20(PHILCO)
- L123CB
- LM723CN
- MC1723CL
- MC1723CP
- ML723CM
- ML723CP
- NE550A
- NE550F
- NE550N
- NTE923D
- RC723D
- SA723CN
- SG723CN
- SK3165
- SN52723N
- SN72723J
- SN72723N
- TCG923D
- TDB0723A
- TM923D
- UA723CA
- UA723CJ
- UA723CN
- UA723DC
- UA723DM
- UA723HM
- UA723ML
- UA723PC
- ULN-2723A
- ULS-2723A
- WEP2331
- WEP2331/923D
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Rail to Rail：
No
- Channels：
2
- VS Min (V)：
-18
- VS Max (V)：
18
- Iq Typ (mA)：
1.3
- VOS Max (mV)：
5
- GBW Typ (MHz)：
2
- SR Typ (V/μs)：
50
- IO Typ (mA)：
0.005
- ΔVOS/ΔT (μV/C)：
7
- Ibias Typ (pA)：
400000
- CMRR Typ (dB)：
110
- Architecture：
Bipolar
- Temperature Range (°C)：
-40 to 125
- Package Type：
SOIC-16
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TI |
20+ |
放大器IC |
11519 |
找原廠原裝進(jìn)口貨選星佑電子就對(duì)了 |
詢價(jià) | ||
NE |
20+ |
SOP |
6532 |
英卓爾原裝現(xiàn)貨!0755-82566558真實(shí)庫(kù)存! |
詢價(jià) | ||
TEXAS INSTRUMENTS |
2023+ |
SMD |
16241 |
安羅世紀(jì)電子只做原裝正品貨 |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
24+ |
14-SOIC |
6000 |
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成 |
詢價(jià) | ||
ZCC |
24+ |
DIPSOP-8 |
393428 |
電源IC原裝正品有優(yōu)勢(shì) |
詢價(jià) | ||
NEC |
24+ |
SOD-89 |
18000 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
ST/意法 |
2023+ |
DIP8 |
47 |
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站 |
詢價(jià) | ||
PHI |
25+ |
TQFP48 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
21+ |
14-SOIC |
8080 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
PHI |
2023+ |
DIP |
9600 |
進(jìn)口原裝現(xiàn)貨 |
詢價(jià) |
相關(guān)規(guī)格書
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
- TL074B
- TL074M
- SN65LVDT3486B
- PS9351L
- PS9317L2
- PS9313L2
- PS9309L2
- PS9308L2
- PS9306L2
- PS9305L
相關(guān)庫(kù)存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
- TL074A
- TL074-EP
- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
- PS9303L
