| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/v2/marking.html">V2；Package：SOT-89；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS 文件：293.31 Kbytes 頁(yè)數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/v2/marking.html">V2；Package：SOT-89；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS 文件：293.31 Kbytes 頁(yè)數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/v4/marking.html">V4；Package：SOT-89；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat 文件：290.08 Kbytes 頁(yè)數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/v4/marking.html">V4；Package：SOT-89；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat 文件：290.08 Kbytes 頁(yè)數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/v4/marking.html">V4；Package：SOT-89；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat 文件：290.08 Kbytes 頁(yè)數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/v4/marking.html">V4；Package：SOT-89；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat 文件：290.08 Kbytes 頁(yè)數(shù)：9 Pages | RENESAS 瑞薩 | RENESAS | ||
SILICON POWER MOS FET 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi 文件：285.57 Kbytes 頁(yè)數(shù)：11 Pages | RENESAS 瑞薩 | RENESAS | ||
絲印：R4；Package：79A；SILICON POWER MOS FET 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi 文件：285.57 Kbytes 頁(yè)數(shù)：11 Pages | RENESAS 瑞薩 | RENESAS | ||
SILICON POWER MOS FET 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 文件：288.55 Kbytes 頁(yè)數(shù)：12 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/w2/marking.html">W2；Package：79A；SILICON POWER MOS FET 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 文件：288.55 Kbytes 頁(yè)數(shù)：12 Pages | RENESAS 瑞薩 | RENESAS |
替換型號(hào)
- 149255
- 221-Z9020
- 276-1740
- 3100001
- 569-0320-831
- 569-0540-623
- 723
- 723C
- 723CJ
- AMX3548
- CA723CE
- CA723E
- EA33X8469
- ECG923D
- GEIC-260
- HA17723G
- IC-20
- IC-20(PHILCO)
- L123CB
- LM723CN
- MC1723CL
- MC1723CP
- ML723CM
- ML723CP
- NE550A
- NE550F
- NE550N
- NTE923D
- RC723D
- SA723CN
- SG723CN
- SK3165
- SN52723N
- SN72723J
- SN72723N
- TCG923D
- TDB0723A
- TM923D
- UA723CA
- UA723CJ
- UA723CN
- UA723DC
- UA723DM
- UA723HM
- UA723ML
- UA723PC
- ULN-2723A
- ULS-2723A
- WEP2331
- WEP2331/923D
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Rail to Rail：
No
- Channels：
2
- VS Min (V)：
-18
- VS Max (V)：
18
- Iq Typ (mA)：
1.3
- VOS Max (mV)：
5
- GBW Typ (MHz)：
2
- SR Typ (V/μs)：
50
- IO Typ (mA)：
0.005
- ΔVOS/ΔT (μV/C)：
7
- Ibias Typ (pA)：
400000
- CMRR Typ (dB)：
110
- Architecture：
Bipolar
- Temperature Range (°C)：
-40 to 125
- Package Type：
SOIC-16
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TI |
1902+ |
DIP |
2734 |
代理品牌 |
詢價(jià) | ||
NE |
20+ |
SOP |
6532 |
英卓爾原裝現(xiàn)貨!0755-82566558真實(shí)庫(kù)存! |
詢價(jià) | ||
TI |
22+ |
DIP8 |
5000 |
全新原裝現(xiàn)貨!價(jià)格優(yōu)惠!可長(zhǎng)期 |
詢價(jià) | ||
恩XP |
24+ |
SOP |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
TI |
10+ |
SOP8 |
26017 |
原盤現(xiàn)貨/2500 |
詢價(jià) | ||
TI |
24+ |
NA |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) | ||
NA |
2022+ |
211 |
全新原裝 貨期兩周 |
詢價(jià) | |||
TI |
24+ |
SO-8 |
50000 |
TI一級(jí)代理進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
UTC |
SOP-8 |
63200 |
詢價(jià) | ||||
PHI |
24+ |
SOP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) |
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