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          首頁 >NE55>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NE5511279A

          SILICON POWER MOS FET

          7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

          文件:272.91 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NE5511279A-T1

          絲?。?a target="_blank" title="Marking" href="/w3/marking.html">W3;Package:79A;SILICON POWER MOS FET

          7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

          文件:272.91 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NE5511279A-T1A

          絲?。?a target="_blank" title="Marking" href="/w3/marking.html">W3;Package:79A;SILICON POWER MOS FET

          7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

          文件:272.91 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NE5512

          Dual high-performance operational amplifier

          DESCRIPTION The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a

          文件:33.64 Kbytes 頁數(shù):4 Pages

          PHI

          PHI

          PHI

          NE5512D

          Dual high-performance operational amplifier

          DESCRIPTION The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a

          文件:33.64 Kbytes 頁數(shù):4 Pages

          PHI

          PHI

          PHI

          NE5512N

          Dual high-performance operational amplifier

          DESCRIPTION The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a

          文件:33.64 Kbytes 頁數(shù):4 Pages

          PHI

          PHI

          PHI

          NE5514

          Quad high-performance operational amplifier

          DESCRIPTION The NE/SE5514 family of quad operational amplifiers sets new standards in bipolar quad amplifier performance. The amplifiers feature low input bias current and low offset voltages. Pinout is identical to LM324/LM348 which facilitates direct product substitution for improved system per

          文件:54.84 Kbytes 頁數(shù):3 Pages

          PHI

          PHI

          PHI

          NE5514D

          Quad high-performance operational amplifier

          DESCRIPTION The NE/SE5514 family of quad operational amplifiers sets new standards in bipolar quad amplifier performance. The amplifiers feature low input bias current and low offset voltages. Pinout is identical to LM324/LM348 which facilitates direct product substitution for improved system per

          文件:54.84 Kbytes 頁數(shù):3 Pages

          PHI

          PHI

          PHI

          NE5514N

          Quad high-performance operational amplifier

          DESCRIPTION The NE/SE5514 family of quad operational amplifiers sets new standards in bipolar quad amplifier performance. The amplifiers feature low input bias current and low offset voltages. Pinout is identical to LM324/LM348 which facilitates direct product substitution for improved system per

          文件:54.84 Kbytes 頁數(shù):3 Pages

          PHI

          PHI

          PHI

          NE5517

          Dual operational transconductance amplifier

          DESCRIPTION The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit p

          文件:298.78 Kbytes 頁數(shù):13 Pages

          PHI

          PHI

          PHI

          技術參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Rail to Rail:

            No

          • Channels:

            2

          • VS Min (V):

            -18

          • VS Max (V):

            18

          • Iq Typ (mA):

            1.3

          • VOS Max (mV):

            5

          • GBW Typ (MHz):

            2

          • SR Typ (V/μs):

            50

          • IO Typ (mA):

            0.005

          • ΔVOS/ΔT (μV/C):

            7

          • Ibias Typ (pA):

            400000

          • CMRR Typ (dB):

            110

          • Architecture:

            Bipolar

          • Temperature Range (°C):

            -40 to 125

          • Package Type:

            SOIC-16

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          更多NE55供應商 更新時間2026-1-20 10:20:00
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