Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

文件：191.77 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual P-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半導(dǎo)體

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

文件：191.77 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual P-Channel 30-V (D-S) MOSFET

文件：1.0589 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description\nSO-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored\nto minimize on-state resistance and provide superior switching performance.These d -2.7 A, -20 V. RDS(ON) = 0.14 W @ VGS = -4.5 V\n?????????????????? RDS(ON) = 0.19 W @ VGS = -2.7 V\n????????????????? RDS(ON) = 0.2 W @ VGS = -2.5 V.\nHigh density cell design for extremely low RDS(ON).\nHigh power and current handling capability in a widely used surface mount package.\nDual MOSFET ;

TI

德州儀器