| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/to-220/marking.html">TO-220;Package:NCE40TD65B;650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.87816 Mbytes 頁(yè)數(shù):10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/to-3p/marking.html">TO-3P;Package:NCE40TD65BP;650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.85667 Mbytes 頁(yè)數(shù):10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/to-247-3l/marking.html">TO-247-3L;Package:NCE40TD65BT;650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:2.0042 Mbytes 頁(yè)數(shù):11 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/to-3p/marking.html">TO-3P;Package:NCE40TH60BP;600V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ? Very low VCE(sat) ? 文件:604.15 Kbytes 頁(yè)數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:TO-3PF;Package:NCE40TH60BPF;600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.03678 Mbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/to-247/marking.html">TO-247;Package:NCE40TH60BT;600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.09131 Mbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/to-247p/marking.html">TO-247P;Package:NCE40TS120VTP;1200V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology Offering ? Very low VCE(sat 文件:2.13786 Mbytes 頁(yè)數(shù):13 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce4435b/marking.html">NCE4435B;Package:SOP-8;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -12A RDS(ON) 文件:714.47 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE4435X;Package:SOP-8;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -10A RDS(ON) 文件:277.4 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce4528k/marking.html">NCE4528K;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4528K uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =45V,ID =28A RDS(ON) 文件:632.64 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Product status:
Production
- Package:
SOP-8
- Polarity:
P
- BVDSS(V):
40
- ID(A):
9
- VTH(V):
1.5
- RDS(ON)@10VTyp(mΩ):
12.9
- RDS(ON)@10VMax(mΩ):
16
- RDS(ON)@4.5VTyp(mΩ):
18.9
- RDS(ON)@4.5VMax(mΩ):
24
- VGS(th)(V):
±20
- CISS(pF):
964
- QG(nC):
22.9
- PD(W):
2
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NCE |
2016+ |
SOP8 |
5500 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
NCEPOWER |
24+ |
SOT-23-3L |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
NCE |
18+ |
SOP-8 |
85600 |
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票 |
詢價(jià) | ||
NCE |
18+ |
SOP-8 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
NCE/新潔能 |
16+ |
TO-252 |
1480 |
原裝正品現(xiàn)貨,可開(kāi)發(fā)票,假一賠十 |
詢價(jià) | ||
NCE |
20+ |
TO-263 |
15800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
NCE |
20+ |
SOP8 |
11520 |
特價(jià)全新原裝公司現(xiàn)貨 |
詢價(jià) | ||
新潔能 |
24+ |
NA |
32000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
NCE新潔能 |
21+ |
TO-3P |
25000 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng) |
詢價(jià) | ||
NCE/新潔能 |
25+ |
SOP8 |
15000 |
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
詢價(jià) |
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