絲印：NCE4435B；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -12A RDS(ON)

文件：714.47 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

12-150V P-Channel Trench MOSFET

NCEPower

新潔能

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE4435X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -10A RDS(ON)

文件：277.4 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

4-Character 5 x 7 Dot Matrix Alphanumeric Programmable Display??with Built-in CMOS Control Functions

DESCRIPTION These Programmable Displays are four digit display system modules. The characters are 0.20 by 0.14 (PD243X), 0.27 by 0.20 (PD353X), and 0.45 by 0.27 (PD443X) 5 x 7 dot matrix arrays constructed with the latest solid state technology in light emitting diodes. FEATURES ? Four Dot Ma

文件：212.45 Kbytes 頁數(shù)：11 Pages

OSRAM

艾邁斯歐司朗

Lead (Pb) Free Product - RoHS Compliant

文件：937.39 Kbytes 頁數(shù)：14 Pages

OSRAM

艾邁斯歐司朗