| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NCE4 | CIT SWITCH 文件：252.92 Kbytes 頁數(shù)：3 Pages | CIT | CIT | |
絲印：4003；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =3A RDS(ON) = 33mΩ @ VGS=10V(Typ) RDS(ON) = 52mΩ @ VGS=4.5V(Typ 文件：686.47 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/4003a/marking.html">4003A；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4003A uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =3A RDS(ON) = 32mΩ @ VGS=10V(Typ) RDS(ON) = 43mΩ @ VGS=4.5V(Ty 文件：701.61 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4005 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =5A RDS(ON) = 22mΩ @ VGS=10V(Typ) RDS(ON) = 36mΩ @ VGS=4.5V(Typ 文件：661.09 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce4009s/marking.html">NCE4009S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =40V,ID =9A RDS(ON) 文件：373.23 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce4015s/marking.html">NCE4015S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =15A RDS(ON) 文件：617.8 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE4090G；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4090G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =90A RDS(ON) 文件：357.83 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce4090k/marking.html">NCE4090K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =90A RDS(ON) =4.2mΩ @ VGS=10V (Typ) RDS(ON) =7.2mΩ @ VGS=4.5V (Typ) ● High density cell 文件：693.26 Kbytes 頁數(shù)：7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE40ED120VT；Package：TO-247-3L；1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench Field Stop Gen.7 Technology Offering 文件：1.19428 Mbytes 頁數(shù)：9 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印：NCE40ED65VT；Package：TO-247-3L；650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features ? Trench field stop Gen.7 Technology Offering 文件：1.11933 Mbytes 頁數(shù)：9 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Product status：
Production
- Package：
SOP-8
- Polarity：
P
- BVDSS(V)：
40
- ID(A)：
9
- VTH(V)：
1.5
- RDS(ON)@10VTyp(mΩ)：
12.9
- RDS(ON)@10VMax(mΩ)：
16
- RDS(ON)@4.5VTyp(mΩ)：
18.9
- RDS(ON)@4.5VMax(mΩ)：
24
- VGS(th)(V)：
±20
- CISS(pF)：
964
- QG(nC)：
22.9
- PD(W)：
2
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NCE |
2016+ |
SOP8 |
5500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
NCEPOWER |
24+ |
SOT-23-3L |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
NCE |
18+ |
SOP-8 |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
NCE |
18+ |
SOP-8 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
NCE/新潔能 |
16+ |
TO-252 |
1480 |
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十 |
詢價 | ||
NCE |
20+ |
TO-263 |
15800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
NCE |
20+ |
SOP8 |
11520 |
特價全新原裝公司現(xiàn)貨 |
詢價 | ||
新潔能 |
24+ |
NA |
32000 |
原裝現(xiàn)貨 |
詢價 | ||
NCE新潔能 |
21+ |
TO-3P |
25000 |
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
NCE/新潔能 |
25+ |
SOP8 |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 |
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