| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印:TO-247;Package:NCE15TD65BT;650V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.12813 Mbytes 頁數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/1608n/marking.html">1608N;Package:SOT23-6L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1608N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 16V,ID =8A RDS(ON) 文件:325.68 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce160ed120vtp/marking.html">NCE160ED120VTP;Package:TO-247P-3L;1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features ? Trench FS Gen.7 Technology Offering ? Lo 文件:1.60741 Mbytes 頁數(shù):10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce160ed120vtp4/marking.html">NCE160ED120VTP4;Package:TO-247P-4L;1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features ? Trench FS Gen.7 Technology Offering ? Lo 文件:1.56534 Mbytes 頁數(shù):11 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE160ED65VTP;Package:TO-247P-3L;650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features ? Trench field stop Gen.7 Technology Offerin 文件:1.57463 Mbytes 頁數(shù):10 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce160ed65vtp/marking.html">NCE160ED65VTP;Package:TO-247P-4L;650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features ? Trench field stop Gen.7 Technology Offerin 文件:1.53728 Mbytes 頁數(shù):11 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features ? Trench field stop Gen.7 Technology Offerin 文件:1.53728 Mbytes 頁數(shù):11 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE16P07J;Package:DFN2X2-6L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE16P07J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -16V,ID = -7A RDS(O 文件:743.15 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE16P40Q;Package:DFN3.3X3.3-8L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE16P40Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ● Power management ● Load switch General Features ● VDS = -40V,ID = -15A RDS(ON) 文件:747.5 Kbytes 頁數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce1805s/marking.html">NCE1805S;Package:SOP-8;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1805S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =185V,ID =5A RDS(ON) 文件:336.55 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Part Status:
Production
- V(BR)CES (V):
1200
- IC(A)_100℃:
200
- PD(W)_25℃:
405
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NCEPOWER |
1215+ |
TO-252 |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng). |
詢價 | ||
NCE |
18+ |
TO-252 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
NCEPOWER |
19+ROHS |
SOT-223 |
180000 |
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十 |
詢價 | ||
NCE |
20+ |
TO-220F |
15800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
新潔能 |
24+ |
NA |
58000 |
原裝現(xiàn)貨 |
詢價 | ||
NCE新潔能 |
21+ |
TO-247 |
25000 |
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
無錫新潔能 |
2447 |
TO-263-2 |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NCE/新潔能 |
21+ |
SOT23-6L |
330000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
NCE/新潔能 |
21+ |
TO-220 |
1456 |
詢價 | |||
原裝 |
1923+ |
TO220 |
8900 |
公司原裝現(xiàn)貨特價長期供貨歡迎來電咨詢 |
詢價 |
相關(guān)規(guī)格書
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- SE1
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- PERICOMPI7C8150
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