| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/nce120ed120vtp/marking.html">NCE120ED120VTP;Package:TO-247P-3L;1200V, 120A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench Field Stop Gen.7 Technology 文件:1.22699 Mbytes 頁(yè)數(shù):9 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce120ed120vtp4/marking.html">NCE120ED120VTP4;Package:TO-247P-4L;1200V, 120A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench Field Stop Gen.7 Technology 文件:1.1386 Mbytes 頁(yè)數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce12p09s/marking.html">NCE12P09S;Package:SOP-8;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -9A RDS(ON) 文件:290.84 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce14p40k/marking.html">NCE14P40K;Package:TO-252-2L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE14P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS = -40V,ID = -30A RDS(ON) =11mΩ @ VGS= -10V (Typ) RDS(ON) =15mΩ @ VGS= -4.5V (Typ) 文件:698.2 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce1504r/marking.html">NCE1504R;Package:SOT-223-3L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1504R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID = 4A RDS(ON) 文件:362.02 Kbytes 頁(yè)數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce1507ak/marking.html">NCE1507AK;Package:TO-252-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID = 7A RDS(ON) 文件:336.17 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce1540ad/marking.html">NCE1540AD;Package:TO-263-2L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =40A RDS(ON) 文件:320.92 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce1540af/marking.html">NCE1540AF;Package:TO-220F;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1540AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =20A RDS(ON) 文件:558.99 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce1550f/marking.html">NCE1550F;Package:TO-220F;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1550F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =50A RDS(ON) 文件:367.68 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce1570/marking.html">NCE1570;Package:TO-220-3L;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1570 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =70A RDS(ON) 文件:371.73 Kbytes 頁(yè)數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Part Status:
Production
- V(BR)CES (V):
1200
- IC(A)_100℃:
200
- PD(W)_25℃:
405
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NCEPOWER |
1215+ |
TO-252 |
150000 |
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng). |
詢價(jià) | ||
NCE |
18+ |
TO-252 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
NCEPOWER |
19+ROHS |
SOT-223 |
180000 |
原裝正品現(xiàn)貨,可開(kāi)發(fā)票,假一賠十 |
詢價(jià) | ||
NCE |
20+ |
TO-220F |
15800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
新潔能 |
24+ |
NA |
58000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
NCE新潔能 |
21+ |
TO-247 |
25000 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng) |
詢價(jià) | ||
無(wú)錫新潔能 |
2447 |
TO-263-2 |
315000 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
NCE/新潔能 |
21+ |
SOT23-6L |
330000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開(kāi)13點(diǎn)增值稅 |
詢價(jià) | ||
NCE/新潔能 |
21+ |
TO-220 |
1456 |
詢價(jià) | |||
原裝 |
1923+ |
TO220 |
8900 |
公司原裝現(xiàn)貨特價(jià)長(zhǎng)期供貨歡迎來(lái)電咨詢 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
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- NE5532A
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相關(guān)庫(kù)存
更多- NE5532
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- SI7970DP
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- SI7913DN
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- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
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- SN65LVDT3486AD
- PS9307L2
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- PS9303L

