| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印:NCE15P25I;Package:TO-251;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON) 文件:532.17 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:NCE15P25J;Package:TO-220-3L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON) 文件:536.84 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce15p25ji/marking.html">NCE15P25JI;Package:TO-251;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON) 文件:485 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce15p25jk/marking.html">NCE15P25JK;Package:TO-252-2L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P25JK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-25A RDS(ON) 文件:522.22 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce15p30/marking.html">NCE15P30;Package:TO-220-3L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-30A RDS(ON) 文件:775.15 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/nce15p30k/marking.html">NCE15P30K;Package:TO-252-2L;NCE P-Channel Enhancement Mode Power MOSFET Description The NCE15P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-30A RDS(ON) 文件:801.23 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/to-263/marking.html">TO-263;Package:NCE15T60BD;600V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ? Very low VCE(sat) 文件:549.36 Kbytes 頁數(shù):7 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/to-263/marking.html">TO-263;Package:NCE15TD120BD;1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.32838 Mbytes 頁數(shù):8 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲?。?a target="_blank" title="Marking" href="/to-247/marking.html">TO-247;Package:NCE15TD120BT;1200V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat) 文件:1.32001 Mbytes 頁數(shù):9 Pages | NCEPOWER 新潔能 | NCEPOWER | ||
絲印:TO-3PN;Package:NCE15TD120LP;1200V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ? Trench FSII Technology offering ? Very low VCE(sat 文件:387.03 Kbytes 頁數(shù):6 Pages | NCEPOWER 新潔能 | NCEPOWER |
技術(shù)參數(shù)
- Part Status:
Production
- V(BR)CES (V):
1200
- IC(A)_100℃:
200
- PD(W)_25℃:
405
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NCEPOWER |
1215+ |
TO-252 |
150000 |
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng). |
詢價 | ||
NCE |
18+ |
TO-252 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
NCEPOWER |
19+ROHS |
SOT-223 |
180000 |
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十 |
詢價 | ||
NCE |
20+ |
TO-220F |
15800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
新潔能 |
24+ |
NA |
58000 |
原裝現(xiàn)貨 |
詢價 | ||
NCE新潔能 |
21+ |
TO-247 |
25000 |
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
無錫新潔能 |
2447 |
TO-263-2 |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NCE/新潔能 |
21+ |
SOT23-6L |
330000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
NCE/新潔能 |
21+ |
TO-220 |
1456 |
詢價 | |||
原裝 |
1923+ |
TO220 |
8900 |
公司原裝現(xiàn)貨特價長期供貨歡迎來電咨詢 |
詢價 |
相關(guān)規(guī)格書
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- SI7938DP
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- SI7948DP
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- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
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