POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 8 AMPERES rDS(on) = 0.4 OHM 80 and 100 VOLTS

文件：383.29 Kbytes 頁數(shù)：5 Pages

MOTOROLA

摩托羅拉

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：289.21 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

P-Channel 100 V (D-S) MOSFET

文件：967.25 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導體

Power Field Effect Transistor

Power Field Effect Transistor\nP-Channel Enhancement-Mode Silicon Gate TMOSTMOS POWER FETs 8 AMPERES\nrDS(on) = 0.4 OHM 80 and 100 VOLTS

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