isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.01 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS E-FET? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo

文件：232.47 Kbytes 頁(yè)數(shù)：8 Pages

MOTOROLA

摩托羅拉

N-Channel 60-V (D-S) MOSFET

文件：979.57 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS E-FET? Power Field Effect Transistor\nN–Channel Enhancement–Mode Silicon GateThis advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low volt

恩XP