N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VGS Rated at ± 20V ? Silicon Gate for Fast Switchi

文件：141.08 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：300.87 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VGS Rated at ± 20V ? Silicon Gate for Fast Switchi

文件：122.44 Kbytes 頁(yè)數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

文件：122.44 Kbytes 頁(yè)數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

Trans MOSFET N-CH 500V 4A

NJS

N-Channel 600V (D-S)Power MOSFET

文件：1.05261 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

High Energy Power FET

文件：171.5 Kbytes 頁(yè)數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

High Energy Power FET

文件：261.48 Kbytes 頁(yè)數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

文件：254.61 Kbytes 頁(yè)數(shù)：8 Pages

MOTOROLA

摩托羅拉

TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

恩XP