TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

TMOS E-FET ? Power Field Effect Transistor DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

無錫固電

Power Field Effect

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ONSEMI

安森美半導(dǎo)體

Power Field Effect

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ONSEMI

安森美半導(dǎo)體

P-Channel 60-V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

恩XP

Power Field Effect

ONSEMI

安森美半導(dǎo)體