N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features 12 A, 60 V. RDS(ON) = 0.15 ? @ VGS = 10 V Low gate charge. Fast switching spe

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FAIRCHILD

仙童半導體

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

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ISC

無錫固電

N-channel Enhancement Mode Power MOSFET

Features ? VDS= 60V, ID= 50A RDS(ON)

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BYCHIP

百域芯

Power MOSFET 12Amps, 60 Volts

文件：81.39 Kbytes 頁數(shù)：12 Pages

ONSEMI

安森美半導體

M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

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FAIRCHILD

仙童半導體

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

文件：209.48 Kbytes 頁數(shù)：10 Pages

MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：346.58 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET 12Amps, 60 Volts

文件：81.39 Kbytes 頁數(shù)：12 Pages

ONSEMI

安森美半導體

N-Channel 60 V (D-S) MOSFET

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VBSEMI

微碧半導體