P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(O

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FAIRCHILD

仙童半導(dǎo)體

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

TMOS V? Power Field Effect Transistor DPAK For Surface Mount P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.23Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

無錫固電

Power MOSFET 12A, 60V P-Channel DPAK

文件：74.89 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

Power MOSFET 12A, 60V P-Channel DPAK

文件：74.89 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

Power MOSFET 12A, 60V P-Channel DPAK

文件：74.89 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

Power MOSFET 12A, 60V P-Channel DPAK

文件：74.89 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

N-Channel 60 V (D-S) MOSFET

文件：1.00428 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

Power MOSFET 12A, 60V P-Channel DPAK

文件：74.89 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

Power MOSFET 12A, 60V P-Channel DPAK

文件：74.89 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體