TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V? Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

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MOTOROLA

摩托羅拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on)= 0.080 OHM

TMOS V? Power Field Effect Transistor\nDPAK for Surface Mount\nN-Channel Enhancement-Mode Silicon GateTMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

恩XP

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET? Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with

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MOTOROLA

摩托羅拉

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET? Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

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MOTOROLA

摩托羅拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V? Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

文件：257.35 Kbytes 頁(yè)數(shù)：10 Pages

MOTOROLA

摩托羅拉

Power MOSFET 20 Amps, 60 Volts N??hannel DPAK

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ONSEMI

安森美半導(dǎo)體

Power MOSFET 20 Amps, 60 Volts N??hannel DPAK

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ONSEMI

安森美半導(dǎo)體

Power MOSFET 20 Amps, 60 Volts, Logic Level N??hannel DPAK

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ONSEMI

安森美半導(dǎo)體

Power MOSFET 20 Amps, 60 Volts, Logic Level N??hannel DPAK

文件：227.27 Kbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

Power MOSFET 20 Amps, 60 Volts, Logic Level N??hannel DPAK

文件：227.27 Kbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體