RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

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FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier appli

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FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common

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MOTOROLA

摩托羅拉

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Features ? Excellent Thermal Stability ? Characterized with Series Equivalent Large-Signal Impedance Parameters ? N Suffix Indicates Lead-Free Terminations. RoHS Compliant. ? In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.

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恩XP

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.

文件：757.51 Kbytes 頁數：20 Pages

MOTOROLA

摩托羅拉

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.

文件：757.51 Kbytes 頁數：20 Pages

MOTOROLA

摩托羅拉

The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.

文件：553.44 Kbytes 頁數：16 Pages

MOTOROLA

摩托羅拉

RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET

Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features ? Enhanced ther

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MA-COM

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

文件：282.74 Kbytes 頁數：8 Pages

MACOM

RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. Features Guaranteed Perf

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MA-COM