RF Power Field Effect Transistor

RF Power Field Effect Transistor N?Channel Enhancement?Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large?signal, common source amplifier applications in 7.5

文件：229.05 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor

175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portabl

文件：463.71 Kbytes 頁數(shù)：13 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

文件：471.04 Kbytes 頁數(shù)：14 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

文件：472.27 Kbytes 頁數(shù)：14 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor

175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portabl

文件：463.71 Kbytes 頁數(shù)：13 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

文件：471.04 Kbytes 頁數(shù)：14 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor

RF Power Field Effect Transistor N?Channel Enhancement?Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large?signal, common source amplifier applications in 7.5

文件：472.35 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor

RF Power Field Effect Transistor N?Channel Enhancement?Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large?signal, common source amplifier applications in 7.5

文件：229.05 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5

文件：479.56 Kbytes 頁數(shù)：16 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5

文件：479.56 Kbytes 頁數(shù)：16 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體