Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain?to?source diode has a low reverse recovery time. These devices are designed for use in low voltage

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ONSEMI

安森美半導(dǎo)體

Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain?to?source diode has a low reverse recovery time. These devices are designed for use in low voltage

文件：211.3 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS

Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. The

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MOTOROLA

摩托羅拉

COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

MiniMOS? devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes

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MOTOROLA

摩托羅拉

DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of wi

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MOTOROLA

摩托羅拉

DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate EZFETs are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process and contain monolithic back–to–back zener diodes. These zener diodes provide protection against

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MOTOROLA

摩托羅拉

DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS

TMOS V SO-8 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as w

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MOTOROLA

摩托羅拉

DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS

TMOS V? SO-8 for Surface Mount N-Channel Enhancement-mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just

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MOTOROLA

摩托羅拉

DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS

Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistors MiniMOS?devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They ar

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MOTOROLA

摩托羅拉

DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS

Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of wi

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MOTOROLA

摩托羅拉