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          首頁(yè) >MMD>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          MMDJ-65608EV-30

          Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

          Description The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transis

          文件:340.55 Kbytes 頁(yè)數(shù):15 Pages

          ATMEL

          愛(ài)特梅爾

          MMDJ-65608EV-30-E

          Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

          Description The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transis

          文件:340.55 Kbytes 頁(yè)數(shù):15 Pages

          ATMEL

          愛(ài)特梅爾

          MMDJ-65608EV-45

          Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

          Description The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transis

          文件:340.55 Kbytes 頁(yè)數(shù):15 Pages

          ATMEL

          愛(ài)特梅爾

          MMDJ-65609EV-40

          Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

          Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Features ? Operating Voltage: 3

          文件:249.24 Kbytes 頁(yè)數(shù):14 Pages

          ATMEL

          愛(ài)特梅爾

          MMDJ-65609EV-40/883

          Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

          Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Features ? Operating Voltage: 3

          文件:249.24 Kbytes 頁(yè)數(shù):14 Pages

          ATMEL

          愛(ài)特梅爾

          MMDJ-65609EV-40-E

          Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

          Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Features ? Operating Voltage: 3

          文件:249.24 Kbytes 頁(yè)數(shù):14 Pages

          ATMEL

          愛(ài)特梅爾

          MMDJ-65609EV-40MQ

          Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

          Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Features ? Operating Voltage: 3

          文件:249.24 Kbytes 頁(yè)數(shù):14 Pages

          ATMEL

          愛(ài)特梅爾

          MMDJ-65609EV-40SLASH883

          Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

          Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Features ? Operating Voltage: 3

          文件:249.24 Kbytes 頁(yè)數(shù):14 Pages

          ATMEL

          愛(ài)特梅爾

          MMDL101

          Schottky Barrier Diode

          Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. ? Very Low Capacitance — Less than 1.0 pF @ Zero Volts ? Low Noise Figure — 6.0 dB Typ @ 1.0 G

          文件:110.8 Kbytes 頁(yè)數(shù):3 Pages

          ETL

          亞歷電子

          MMDL101

          SURFACE MOUNT SCHOTTKY BARRIER DIODE

          Very Low Capacitance Low Noise Figure 6.0dB Typ. @ 1.0GHz PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

          文件:51.48 Kbytes 頁(yè)數(shù):4 Pages

          WTE

          Won-Top Electronics

          技術(shù)參數(shù)

          • 產(chǎn)品材質(zhì):

            聚酯薄膜

          • 產(chǎn)品用途:

            交流電源雜防回路

          • 額定電壓(V):

            125V.a.c250V.a.c

          • 容量范圍(μF):

            0.010~1.0μF0.010~0.47μF

          • 使用范圍溫度(℃):

            -40℃~+105℃

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          更多MMD供應(yīng)商 更新時(shí)間2026-1-21 16:01:00
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