| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi 文件：129.229 Kbytes 頁數(shù)：11 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/d-pak/marking.html">D-PAK；Package：TO-252；TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) ● Electri 文件：236.94 Kbytes 頁數(shù)：2 Pages | FS | FS | ||
NPN SURFACE MOUNT TRANSISTOR Features ? BVCEO > 100V ? IC = 3A high Continuous Collector Current ? ICM = 5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? Complementary PNP Type: MJD32C ? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” 文件：126.03 Kbytes 頁數(shù)：5 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi 文件：129.229 Kbytes 頁數(shù)：11 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/mjd31ca/marking.html">MJD31CA；Package：DPAK；100 V, 3 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Elec 文件：231.53 Kbytes 頁數(shù)：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi 文件：129.229 Kbytes 頁數(shù)：11 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲印：MJD31CAH；Package：DPAK；100 V, 3 A NPN high power bipolar transistor Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? High current gain at VCE = 60 V ? Electrically similar to popular MJD31 series ? Low collector emitter saturation voltage ? Fast switching speeds ? Qualified according to 文件：226.32 Kbytes 頁數(shù)：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
100 V, 3 A NPN high power bipolar transistor Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? High current gain at VCE = 60 V ? Electrically similar to popular MJD31 series ? Low collector emitter saturation voltage ? Fast switching speeds ? Qualified according to 文件：226.32 Kbytes 頁數(shù)：11 Pages | NEXPERIA 安世 | NEXPERIA | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > 100V ? IC = 3A high Continuous Collector Current ? ICM = 5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? C 文件：316.5 Kbytes 頁數(shù)：7 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features ? BVCEO > 100V ? IC = 3A high Continuous Collector Current ? ICM = 5A Peak Pulse Current ? Ideal for Power Switching or Amplification Applications ? C 文件：316.5 Kbytes 頁數(shù)：7 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
低頻或音頻放大 （LF）_功率放大 （PA）
- 封裝形式：
貼片封裝
- 極限工作電壓：
- 最大電流允許值：
3A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號(hào)：
- 最大耗散功率：
15W
- 放大倍數(shù)：
- 圖片代號(hào)：
G-217
- vtest：
0
- htest：
999900
- atest：
3
- wtest：
15
技術(shù)參數(shù)
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Polarity：
NPN
- Type：
General Purpose
- VCE(sat) Max (V)：
1.2
- IC Cont. (A)：
3
- VCEO Min (V)：
40
- VCBO (V)：
40
- VEBO (V)：
5
- VBE(on) (V)：
1.8
- hFE Min：
10
- hFE Max：
50
- fT Min (MHz)：
3
- PTM Max (W)：
15
- Package Type：
DPAK-3
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
25+ |
N/A |
11543 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
ONSEMICONDU |
24+ |
原裝進(jìn)口原廠原包接受訂貨 |
2866 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ON |
23+ |
TO-252 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
ON |
18+ |
TO-252 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
MJD31 |
25+ |
3 |
3 |
詢價(jià) | |||
ON/安森美 |
22+ |
TO-252 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
ON/安森美 |
24+ |
TSSOP |
10000 |
原裝進(jìn)口只做訂貨 尋找優(yōu)勢(shì)渠道合作 |
詢價(jià) | ||
ON(安森美) |
23+ |
標(biāo)準(zhǔn)封裝 |
5000 |
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢(shì)終端BOM表可配單提供樣品 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-252 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) |
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