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          首頁 >MJD31>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MJD31

          General Purpose Amplifier Low Speed Switching Applications

          NPN Epitaxial Silicon Transistor Features ? General Purpose Amplifier ? Low Speed Switching Applications ? Load Formed for Surface Mount Application (No Suffix) ? Straight Lead (I-PAK, “- I” Suffix) ? Electrically Similar to Popular TIP31 and TIP31C

          文件:49.27 Kbytes 頁數(shù):5 Pages

          FAIRCHILD

          仙童半導體

          MJD31

          Complementary Power Transistors

          Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves ? Straight Lead Version in Plastic Sleeves (“1” Suffix) ? Lead Formed Versi

          文件:129.229 Kbytes 頁數(shù):11 Pages

          ONSEMI

          安森美半導體

          MJD31

          Complementary Power Transistors

          Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available

          文件:47.86 Kbytes 頁數(shù):2 Pages

          KEXIN

          科信電子

          MJD31

          Complementary Power Transistors

          文件:135.34 Kbytes 頁數(shù):10 Pages

          ONSEMI

          安森美半導體

          MJD31

          Complementary Power Transistors

          文件:100.84 Kbytes 頁數(shù):10 Pages

          ONSEMI

          安森美半導體

          MJD31

          Complementary Power Transistors

          文件:81.61 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導體

          MJD31B

          COMPLEMENTARY SILICON POWER TRANSISTORS

          DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX

          文件:65.36 Kbytes 頁數(shù):5 Pages

          STMICROELECTRONICS

          意法半導體

          MJD31C

          Low voltage NPN power transistor

          Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP typ

          文件:243.6 Kbytes 頁數(shù):9 Pages

          STMICROELECTRONICS

          意法半導體

          MJD31C

          Low voltage NPN power transistor

          Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. General features ■ This device is qualified for automotive application ■ Surface-mounting

          文件:241.24 Kbytes 頁數(shù):9 Pages

          STMICROELECTRONICS

          意法半導體

          MJD31C

          絲印:MJD31C;Package:DPAK;100 V, 3 A NPN high power bipolar transistor

          1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Elect

          文件:230.43 Kbytes 頁數(shù):11 Pages

          NEXPERIA

          安世

          晶體管資料

          • 型號:

            MJD31

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

          • 性質(zhì):

            低頻或音頻放大 (LF)_功率放大 (PA)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

          • 最大電流允許值:

            3A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

          • 最大耗散功率:

            15W

          • 放大倍數(shù):

          • 圖片代號:

            G-217

          • vtest:

            0

          • htest:

            999900

          • atest:

            3

          • wtest:

            15

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • AEC Qualified:

            A

          • Halide free:

            H

          • PPAP Capablee:

            P

          • Status:

            Active

          • Polarity:

            NPN

          • Type:

            General Purpose

          • VCE(sat) Max (V):

            1.2

          • IC Cont. (A):

            3

          • VCEO Min (V):

            40

          • VCBO (V):

            40

          • VEBO (V):

            5

          • VBE(on) (V):

            1.8

          • hFE Min:

            10

          • hFE Max:

            50

          • fT Min (MHz):

            3

          • PTM Max (W):

            15

          • Package Type:

            DPAK-3

          供應(yīng)商型號品牌批號封裝庫存備注價格
          ONSEMI
          25+
          N/A
          11543
          正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
          詢價
          ONSEMICONDU
          24+
          原裝進口原廠原包接受訂貨
          2866
          原裝現(xiàn)貨假一罰十
          詢價
          ON
          23+
          TO-252
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          ON
          18+
          TO-252
          41200
          原裝正品,現(xiàn)貨特價
          詢價
          ON/安森美
          23+
          TO-252
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          MJD31
          25+
          3
          3
          詢價
          ON/安森美
          22+
          TO-252
          100000
          代理渠道/只做原裝/可含稅
          詢價
          ON/安森美
          24+
          TSSOP
          10000
          原裝進口只做訂貨 尋找優(yōu)勢渠道合作
          詢價
          ON(安森美)
          23+
          標準封裝
          5000
          原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品
          詢價
          ON/安森美
          23+
          TO-252
          89630
          當天發(fā)貨全新原裝現(xiàn)貨
          詢價
          更多MJD31供應(yīng)商 更新時間2026-1-20 10:50:00
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