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          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MJD127

          絲?。?strong>MJD127;Package:TO-252-2L;TO-252-2L Plastic-Encapsulate Transistors

          FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C

          文件:2.32459 Mbytes 頁數(shù):5 Pages

          DGNJDZ

          南晶電子

          MJD127

          絲?。?strong>MJD127;Package:TO-252-2L;TO-252-2L Plastic-Encapsulate Transistors

          FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C

          文件:2.32459 Mbytes 頁數(shù):5 Pages

          DGNJDZ

          南晶電子

          MJD127

          絲?。?a target="_blank" title="Marking" href="/d-pak/marking.html">D-PAK;Package:TO-252;PNP Silicon Darlington Transistor

          FEATURES ? High DC Current Gain ? Electrically Similar to Popular TIP127 ? Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

          文件:360.31 Kbytes 頁數(shù):2 Pages

          FS

          MJD127

          D-PAK for Surface Mount Applications

          ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications (No Suffix) ? Straight Lead (I-PAK, “ - I “ Suffix) ? Electrically Similar to Popular TIP127 ? Complement to MJD122

          文件:69.15 Kbytes 頁數(shù):4 Pages

          SYC

          MJD127

          TO-252-2L P lastic-Encapsulate Transistors

          TRANSISTOR (PNP) Feature ● High DC Current Gain ● Electrically Similar to Popular TIP127 ● Built-in a Damper Diode at E-C

          文件:2.18315 Mbytes 頁數(shù):3 Pages

          HDSEMI

          海德半導(dǎo)體

          MJD127

          COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

          DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

          文件:81.7 Kbytes 頁數(shù):6 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          MJD127

          Complementary Darlington Power Transistors

          Features ? D-PAK for Surface Mount Applications ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications ? Electrically Similar to Popular TIP122 ? Complement to MJD127

          文件:137.52 Kbytes 頁數(shù):8 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          MJD127

          D-PAK for Surface Mount Applications

          D-PAK for Surface Mount Applications ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications (No Suffix) ? Straight Lead (I-PAK, “ - I “ Suffix) ? Electrically Similar to Popular TIP127 ? Complement to MJD122

          文件:56.54 Kbytes 頁數(shù):5 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          MJD127

          Complementary Darlington Power Transistors

          Features ? D-PAK for Surface Mount Applications ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications ? Electrically Similar to Popular TIP122 ? Complement to MJD127

          文件:284.04 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          MJD127

          PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS)

          D?PACK FOR SURFACE MOUNT APPLICATIONS ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Load Formed for Surface Mount Applications (No Suffix) ? Stright Lead (I?PACK, -1 Suffix) ? Electrically Similar to Popular TIP127

          文件:194.72 Kbytes 頁數(shù):3 Pages

          SAMSUNG

          三星

          晶體管資料

          • 型號:

            MJD127

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Darl

          • 性質(zhì):

            低頻或音頻放大 (LF)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

          • 最大電流允許值:

            8A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

          • 最大耗散功率:

            20W

          • 放大倍數(shù):

          • 圖片代號:

            G-127

          • vtest:

            0

          • htest:

            999900

          • atest:

            8

          • wtest:

            20

          詳細參數(shù)

          • 型號:

            MJD127

          • 功能描述:

            達林頓晶體管 8A 100V Bipolar

          • RoHS:

          • 制造商:

            Texas Instruments

          • 配置:

            Octal

          • 晶體管極性:

            NPN 集電極—發(fā)射極最大電壓

          • VCEO:

            50 V 發(fā)射極 - 基極電壓

          • VEBO:

            集電極—基極電壓

          • 最大直流電集電極電流:

            0.5 A

          • 最大工作溫度:

            + 150 C

          • 安裝風格:

            SMD/SMT

          • 封裝/箱體:

            SOIC-18

          • 封裝:

            Reel

          供應(yīng)商型號品牌批號封裝庫存備注價格
          onsemi(安森美)
          24+
          TO-252
          959
          原廠訂貨渠道,支持BOM配單一站式服務(wù)
          詢價
          CJ/長電
          25+
          TO-252-2L
          20300
          CJ/長電原裝特價MJD127即刻詢購立享優(yōu)惠#長期有貨
          詢價
          25+
          100
          公司現(xiàn)貨庫存
          詢價
          CJ
          17+
          TO-252
          6048
          全新原裝正品s
          詢價
          CJ
          23+
          TO252
          52500
          原廠原裝正品
          詢價
          CJ/長電
          2021+
          TO-252
          9000
          原裝現(xiàn)貨,隨時歡迎詢價
          詢價
          ON
          24+
          TO-252-2(DPAK)
          10000
          只做原裝進口現(xiàn)貨
          詢價
          CJ
          2450+
          TO252
          9850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價
          ON
          24+/25+
          338
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          FAIRCHILD
          24+
          TO-252(DPAK)
          8866
          詢價
          更多MJD127供應(yīng)商 更新時間2026-1-19 13:41:00
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