絲?。?strong>MJD45H11；Package：DPAK；80 V, 8 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Ele

文件：241.7 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲印：MJD45H11A；Package：DPAK；80 V, 8 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? El

文件：242.38 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲?。?strong>MJD45H11；Package：DPAK；80 V, 8 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Ele

文件：241.7 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/mjd45h11a/marking.html">MJD45H11A；Package：DPAK；80 V, 8 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? El

文件：242.38 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

isc Silicon PNP Power Transistors

DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= -1.0V(Max)@ IC = -8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in ap

文件：342.97 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Complementary Power Transistors

Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Fast Switching Speeds ● Complementary Pairs Simplifies Designs ● Pb?Free Packages are Available

文件：47.12 Kbytes 頁數(shù)：2 Pages

KEXIN

科信電子

COMPLEMENTARY SILICON PNP TRANSISTORS

MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app

文件：64.379 Kbytes 頁數(shù)：5 Pages

STMICROELECTRONICS

意法半導(dǎo)體

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications ? Load Formed for Surface Mount Application (No Suffix) ? Straight Lead (I-PAK: “-I” Suffix) ? Electrically Similar to Popular MJE45H ? Fast Switching Speeds ? Low Collect

文件：42.37 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Pb?Free Packages are Available ? Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) ? Stra

文件：192.88 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“

文件：310.51 Kbytes 頁數(shù)：11 Pages

ONSEMI

安森美半導(dǎo)體