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          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MJD148

          絲印:MJD148;Package:DPAK;45 V, 4 A NPN high power bipolar transistor

          1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Electrically similar to popul

          文件:220.69 Kbytes 頁數(shù):10 Pages

          NEXPERIA

          安世

          MJD148-Q

          絲?。?a target="_blank" title="Marking" href="/mjd148a/marking.html">MJD148A;Package:DPAK;45 V, 4 A NPN high power bipolar transistor

          Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Electrically similar to popular MJD148 series ? Low collector emitter saturation voltage ? Fast switching speeds ? Qualified according to AEC-Q101 and recommended for use

          文件:222.91 Kbytes 頁數(shù):10 Pages

          NEXPERIA

          安世

          MJD148

          絲?。?strong>MJD148;Package:DPAK;45 V, 4 A NPN high power bipolar transistor

          1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Electrically similar to popul

          文件:220.69 Kbytes 頁數(shù):10 Pages

          NEXPERIA

          安世

          MJD148-Q

          絲?。?a target="_blank" title="Marking" href="/mjd148a/marking.html">MJD148A;Package:DPAK;45 V, 4 A NPN high power bipolar transistor

          Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Electrically similar to popular MJD148 series ? Low collector emitter saturation voltage ? Fast switching speeds ? Qualified according to AEC-Q101 and recommended for use

          文件:222.91 Kbytes 頁數(shù):10 Pages

          NEXPERIA

          安世

          MJD148

          NPN Silicon Power Transistor

          NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? High Gain ? 50 Min @ IC = 2.0 A ? Low Saturation Voltage ? 0.5 V @ IC = 2.0 A ? High Current Gain ? Bandwidth Product ? fT = 3.0 MHz Min @

          文件:69.4 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          MJD148

          NPN SILICON PLASTIC POWER TRANSISTORS

          NPN SILICON PLASTIC POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications

          文件:596.78 Kbytes 頁數(shù):5 Pages

          CDIL

          MJD148

          isc Silicon NPN Power Transistor

          DESCRIPTION ? DC Current Gain- : hFE = 85(Min) @ IC= 0.5A ? Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@ IC= 2A ? DPAK for Surface Mount Applications ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for use in general

          文件:244.77 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MJD148

          Silicon NPN Power Transistor

          DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 45V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.5V(Max) @IC= 2A APPLICATIONS · Designed for use in general purpose amplifer and low Speed switching applications

          文件:279.09 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MJD148-QJ

          45 V, 4 A NPN high power bipolar transistor

          Features and benefits ? High thermal power dissipation capability ? High energy efficiency due to less heat generation ? Electrically similar to popular MJD148 series ? Low collector emitter saturation voltage ? Fast switching speeds ? Qualified according to AEC-Q101 and recommended for use

          文件:222.91 Kbytes 頁數(shù):10 Pages

          NEXPERIA

          安世

          MJD148T4

          NPN Silicon Power Transistor

          NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ? High Gain ? 50 Min @ IC = 2.0 A ? Low Saturation Voltage ? 0.5 V @ IC = 2.0 A ? High Current Gain ? Bandwidth Product ? fT = 3.0 MHz Min @

          文件:69.4 Kbytes 頁數(shù):6 Pages

          ONSEMI

          安森美半導(dǎo)體

          詳細(xì)參數(shù)

          • 型號:

            MJD148

          • 制造商:

            ONSEMI

          • 制造商全稱:

            ON Semiconductor

          • 功能描述:

            NPN Silicon Power Transistor

          供應(yīng)商型號品牌批號封裝庫存備注價格
          ON
          23+
          TO-252
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          FCS
          23+
          TO-2523L(DPAK)
          69820
          終端可以免費供樣,支持BOM配單!
          詢價
          ON/安森美
          2022+
          DPAK-4
          12888
          原廠代理 終端免費提供樣品
          詢價
          ON/安森美
          23+
          TO-251
          13000
          原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
          詢價
          ON/安森美
          22+
          TO-252-4
          98688
          詢價
          ON
          22+
          TO-220-3
          50000
          原裝正品假一罰十,代理渠道價格優(yōu)
          詢價
          ON
          25+
          TO-252-4
          12300
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          NEXPERIA/安世
          25+
          SOT-428
          880000
          明嘉萊只做原裝正品現(xiàn)貨
          詢價
          NEXPERIA/安世
          24+
          DPAK
          60000
          全新原裝現(xiàn)貨
          詢價
          NEXPERIA/安世
          24+
          SOT-428
          60100
          鄭重承諾只做原裝進(jìn)口現(xiàn)貨
          詢價
          更多MJD148供應(yīng)商 更新時間2026-1-19 14:56:00
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