<strong id="5lvfi"><dl id="5lvfi"></dl></strong>

      • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
        <th id="5lvfi"><progress id="5lvfi"></progress></th>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
          <strong id="5lvfi"><form id="5lvfi"></form></strong>
        1. <del id="5lvfi"></del>

          首頁 >MJD112>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MJD112_V02

          Complementary Darlington Power Transistors DPAK For Surface Mount Applications

          Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“?

          文件:152.64 Kbytes 頁數(shù):10 Pages

          ONSEMI

          安森美半導體

          MJD112-001

          Complementary Darlington Power Transistors

          Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications

          文件:147.74 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導體

          MJD1121

          SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

          Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. ? Lead Formed for Surface Mount Applications in Plastic

          文件:306.48 Kbytes 頁數(shù):6 Pages

          MOTOROLA

          摩托羅拉

          MJD112-1G

          Complementary Darlington Power Transistors

          Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (

          文件:207.94 Kbytes 頁數(shù):11 Pages

          ONSEMI

          安森美半導體

          MJD112-1G

          Complementary Darlington Power Transistors DPAK For Surface Mount Applications

          Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“?

          文件:152.64 Kbytes 頁數(shù):10 Pages

          ONSEMI

          安森美半導體

          MJD112-251

          Silicon NPN Power Transistor

          DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

          文件:296.52 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MJD112-252

          Silicon NPN Power Transistor

          DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

          文件:277.58 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          MJD112G

          Complementary Darlington Power Transistors DPAK For Surface Mount Applications

          Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“?

          文件:152.64 Kbytes 頁數(shù):10 Pages

          ONSEMI

          安森美半導體

          MJD112G

          Complementary Darlington Power Transistors

          Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (

          文件:207.94 Kbytes 頁數(shù):11 Pages

          ONSEMI

          安森美半導體

          MJD112L

          EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

          MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES ? High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. ? Low Collector-Emitter Saturation Voltage. ? Straight Lead (IPAK, L Suffix) ? Complementary to MJD117/L.

          文件:394.6 Kbytes 頁數(shù):2 Pages

          KEC

          KEC(Korea Electronics)

          晶體管資料

          • 型號:

            MJD112

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Darl

          • 性質(zhì):

            低頻或音頻放大 (LF)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

          • 最大電流允許值:

            2A

          • 最大工作頻率:

            <1MHZ或未知

          • 引腳數(shù):

            3

          • 可代換的型號:

          • 最大耗散功率:

            20W

          • 放大倍數(shù):

          • 圖片代號:

            G-217

          • vtest:

            0

          • htest:

            999900

          • atest:

            2

          • wtest:

            20

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • AEC Qualified:

            A

          • Halide free:

            H

          • PPAP Capablee:

            P

          • Status:

            Active

          • Polarity:

            NPN

          • IC Continuous (A):

            2

          • V(BR)CEO Min (V):

            100

          • VCE(sat) Max (V):

            2

          • hFE Min (k):

            1

          • hFE Max (k):

            12

          • fT Min (MHz):

            25

          • Package Type:

            DPAK INSERTION MOUNT

          供應商型號品牌批號封裝庫存備注價格
          CJ/長電
          25+
          TO-251-3L
          20300
          CJ/長電原裝特價MJD112即刻詢購立享優(yōu)惠#長期有貨
          詢價
          ON
          24+
          TO-252-2
          85600
          全新原裝現(xiàn)貨/假一罰百!
          詢價
          CJ
          23+
          TO-252
          7050
          原廠原裝正品
          詢價
          CJ/長電
          2021+
          TO-252
          9000
          原裝現(xiàn)貨,隨時歡迎詢價
          詢價
          CJ
          2450+
          TO-252
          9850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價
          ONSEMI
          25+
          N/A
          21000
          正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
          詢價
          1415+
          TO-252
          28500
          全新原裝正品,優(yōu)勢熱賣
          詢價
          24+
          SOT252
          1000
          詢價
          MOT
          05+
          原廠原裝
          2940
          只做全新原裝真實現(xiàn)貨供應
          詢價
          ONSEMICONDU
          24+
          原封裝
          4206
          原裝現(xiàn)貨假一罰十
          詢價
          更多MJD112供應商 更新時間2026-1-18 14:14:00
            <strong id="5lvfi"><dl id="5lvfi"></dl></strong>

              • <tfoot id="5lvfi"><menuitem id="5lvfi"></menuitem></tfoot>
                <th id="5lvfi"><progress id="5lvfi"></progress></th>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                  <strong id="5lvfi"><form id="5lvfi"></form></strong>
                1. <del id="5lvfi"></del>
                  额去撸在线 | 国产又爽 又黄 免费网站视频 | 水蜜桃成视频人app | 俺去啦电影网 | 久草福利|