| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MJD112 | TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers. 文件：244.32 Kbytes 頁數(shù)：1 Pages | DCCOM 道全 | DCCOM | |
MJD112 | Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 文件：296.52 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
MJD112 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Lin 文件：84.64 Kbytes 頁數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
MJD112 | TO-251/TO-252-2 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Complementary darlington power transistors dpak for surface mount applications 文件：109.68 Kbytes 頁數(shù)：2 Pages | WINNERJOIN 永而佳 | WINNERJOIN | |
MJD112 | Silicon NPN transistor in a TO-252 Plastic Package. Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP112. Applications Medium power switching applications. 文件：821.64 Kbytes 頁數(shù)：6 Pages | FOSHAN 藍箭電子 | FOSHAN | |
MJD112 | TRANSISTOR (NPN) FEATURES ? Complementary Darlington Power Transistors Dpak for Surface Mount Applications 文件：543.92 Kbytes 頁數(shù)：4 Pages | FS | FS | |
MJD112 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：250.7 Kbytes 頁數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
MJD112 | Complementary power Darlington transistors 文件：388.17 Kbytes 頁數(shù)：10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
MJD112 | TRANSISTOR (NPN) 文件：1.54779 Mbytes 頁數(shù)：3 Pages | JIANGSU 長電科技 | JIANGSU | |
MJD112 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：204.34 Kbytes 頁數(shù)：1 Pages | TGS | TGS |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Darl
- 性質(zhì)：
低頻或音頻放大 （LF）
- 封裝形式：
貼片封裝
- 極限工作電壓：
- 最大電流允許值：
2A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
20W
- 放大倍數(shù)：
- 圖片代號：
G-217
- vtest：
0
- htest：
999900
- atest：
2
- wtest：
20
技術(shù)參數(shù)
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Polarity：
NPN
- IC Continuous (A)：
2
- V(BR)CEO Min (V)：
100
- VCE(sat) Max (V)：
2
- hFE Min (k)：
1
- hFE Max (k)：
12
- fT Min (MHz)：
25
- Package Type：
DPAK INSERTION MOUNT
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
CJ/長電 |
25+ |
TO-251-3L |
20300 |
CJ/長電原裝特價MJD112即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
ON |
24+ |
TO-252-2 |
85600 |
全新原裝現(xiàn)貨/假一罰百! |
詢價 | ||
CJ |
23+ |
TO-252 |
7050 |
原廠原裝正品 |
詢價 | ||
CJ/長電 |
2021+ |
TO-252 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
CJ |
2450+ |
TO-252 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
ONSEMI |
25+ |
N/A |
21000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
1415+ |
TO-252 |
28500 |
全新原裝正品,優(yōu)勢熱賣 |
詢價 | |||
24+ |
SOT252 |
1000 |
詢價 | ||||
MOT |
05+ |
原廠原裝 |
2940 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
ONSEMICONDU |
24+ |
原封裝 |
4206 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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