| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MJD112 | Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications 文件：147.74 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MJD112 | D-PAK for Surface Mount Applications Features ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications (No Suffix) 文件：51.44 Kbytes 頁數(shù)：5 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
MJD112 | Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves ( 文件：207.94 Kbytes 頁數(shù)：11 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MJD112 | Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“? 文件：152.64 Kbytes 頁數(shù)：10 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
MJD112 | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES ? High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. ? Low Collector-Emitter Saturation Voltage. ? Straight Lead (IPAK, L Suffix) ? Complementary to MJD117/L. 文件：394.6 Kbytes 頁數(shù)：2 Pages | KEC KEC(Korea Electronics) | KEC | |
MJD112 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications 文件：90.16 Kbytes 頁數(shù)：6 Pages | CDIL | CDIL | |
MJD112 | Silicon NPN epitaxial planer Transistors Features ? Halogen free available upon request by adding suffix -HF ? Lead Free Finish/RoHS Compliant(P Suffix designates RoHS Compliant. See ordering information) ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? High DC Current Gain ? Built-in a damper diode 文件：382.92 Kbytes 頁數(shù)：3 Pages | MCC | MCC | |
MJD112 | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. ? Lead Formed for Surface Mount Applications in Plastic 文件：306.48 Kbytes 頁數(shù)：6 Pages | MOTOROLA 摩托羅拉 | MOTOROLA | |
MJD112 | isc Silicon NPN Darlington Power Transistor DESCRIPTION ? High DC current gain ? Lead formed for surface mount applications(NO suffix) ? Straight lead(IPAK,“ －I” suffix) ? Built-in a damper diode at E-C ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Desi 文件：299.08 Kbytes 頁數(shù)：3 Pages | ISC 無錫固電 | ISC | |
MJD112 | Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 文件：277.58 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Darl
- 性質(zhì)：
低頻或音頻放大 （LF）
- 封裝形式：
貼片封裝
- 極限工作電壓：
- 最大電流允許值：
2A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
20W
- 放大倍數(shù)：
- 圖片代號：
G-217
- vtest：
0
- htest：
999900
- atest：
2
- wtest：
20
技術(shù)參數(shù)
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Polarity：
NPN
- IC Continuous (A)：
2
- V(BR)CEO Min (V)：
100
- VCE(sat) Max (V)：
2
- hFE Min (k)：
1
- hFE Max (k)：
12
- fT Min (MHz)：
25
- Package Type：
DPAK INSERTION MOUNT
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
CJ/長電 |
25+ |
TO-251-3L |
20300 |
CJ/長電原裝特價MJD112即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
ON |
24+ |
TO-252-2 |
85600 |
全新原裝現(xiàn)貨/假一罰百! |
詢價 | ||
CJ |
23+ |
TO-252 |
7050 |
原廠原裝正品 |
詢價 | ||
CJ/長電 |
2021+ |
TO-252 |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
CJ |
2450+ |
TO-252 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
ONSEMI |
25+ |
N/A |
21000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
1415+ |
TO-252 |
28500 |
全新原裝正品,優(yōu)勢熱賣 |
詢價 | |||
24+ |
SOT252 |
1000 |
詢價 | ||||
MOT |
05+ |
原廠原裝 |
2940 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
ONSEMICONDU |
24+ |
原封裝 |
4206 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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