2.54mm Pitch Bottom Entry Type Connector

■ Features 1. Board to Board Size Freely Settable The board to board size can be set at infinite stages, according to the header pin through type structure and the diverse header variation. The board to board size can be set at infinite stages. 2. Integrity of Parts Mounted Surface The

文件：284.19 Kbytes 頁數：7 Pages

HIROSEHirose Electric Company

廣瀨日本廣瀨電機株式會社

2.54mm Pitch Bottom Entry Type Connector

■ Features 1. Board to Board Size Freely Settable The board to board size can be set at infinite stages, according to the header pin through type structure and the diverse header variation. The board to board size can be set at infinite stages. 2. Integrity of Parts Mounted Surface The

文件：284.19 Kbytes 頁數：7 Pages

HIROSEHirose Electric Company

廣瀨日本廣瀨電機株式會社

2.54mm Pitch Bottom Entry Type Connector

■ Features 1. Board to Board Size Freely Settable The board to board size can be set at infinite stages, according to the header pin through type structure and the diverse header variation. The board to board size can be set at infinite stages. 2. Integrity of Parts Mounted Surface The

文件：284.19 Kbytes 頁數：7 Pages

HIROSEHirose Electric Company

廣瀨日本廣瀨電機株式會社

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.96 Kbytes 頁數：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.94 Kbytes 頁數：2 Pages

ISC

無錫固電

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

The MDF9N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance,high switching performance and excellent quality. MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications.

文件：771.41 Kbytes 頁數：6 Pages

MGCHIP

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

The MDF9N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance,high switching performance and excellent quality. MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications.

文件：771.41 Kbytes 頁數：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.91 Kbytes 頁數：2 Pages

ISC

無錫固電

N-Channel MOSFET 600V, 9A, 0.75(ohm)

The MDF9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N60 is suitable device for SMPS, high Speed switching and general purpose applications.

文件：739.29 Kbytes 頁數：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：323.12 Kbytes 頁數：2 Pages

ISC

無錫固電