Metalized Polyester Film Capacitors MDF: General Purpose, Lead Space 7.5mm~42.5mm

文件：1.07291 Mbytes 頁數(shù)：2 Pages

RFE

RFE international

DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATED TYPE) MDF(R)100A is a diode with flat mounting base which is designed for use in various rectifier applications. ● IF（AV）＝100A, VRRM＝500V ● Easy Construction with Anode（F） Type and Cathode（R） type. ● High reliability by glass passivation （Applications） Various Rectifier

文件：90.76 Kbytes 頁數(shù)：2 Pages

SANREX

三社

DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATED TYPE) MDF(R)100A is a diode with flat mounting base which is designed for use in various rectifier applications. ● IF（AV）＝100A, VRRM＝500V ● Easy Construction with Anode（F） Type and Cathode（R） type. ● High reliability by glass passivation （Applications） Various Rectifier

文件：90.76 Kbytes 頁數(shù)：2 Pages

SANREX

三社

DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATED TYPE) MDF(R)100A is a diode with flat mounting base which is designed for use in various rectifier applications. ● IF（AV）＝100A, VRRM＝500V ● Easy Construction with Anode（F） Type and Cathode（R） type. ● High reliability by glass passivation （Applications） Various Rectifier

文件：90.76 Kbytes 頁數(shù)：2 Pages

SANREX

三社

絲印：10N055；Package：TO-220F；Single N-channel Trench MOSFET 100V 5.5mΩ 80A

General description The MDF10N055TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Synchronous Rectification and gene

文件：602.66 Kbytes 頁數(shù)：7 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.72 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel MOSFET 600V, 10A, 0.7(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat

文件：1.43302 Mbytes 頁數(shù)：8 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.58 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel MOSFET 600V, 11A, 0.55?

General Description The MDF11N60 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF11N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features ? VDS = 600V ? VDS =

文件：1.18286 Mbytes 頁數(shù)：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.54 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電