isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

無錫固電

N-Channel MOSFET 600V, 10A, 0.7(ohm)

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MGCHIP

600V N-Ch MOSFET

MagnaChip

美格納

isc N-Channel MOSFET Transistor

文件：318.67 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel MOSFET 600V, 10A, 0.7(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat

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MGCHIP

N-Channel MOSFET 600V, 10A, 0.75(ohm)

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MGCHIP