B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

文件：327.76 Kbytes 頁數(shù)：11 Pages

MOTOROLA

摩托羅拉

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

文件：327.76 Kbytes 頁數(shù)：11 Pages

MOTOROLA

摩托羅拉

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

文件：327.76 Kbytes 頁數(shù)：11 Pages

MOTOROLA

摩托羅拉

COMPLEMENTARY SILICON POWER TRANSITORS

Designed for use in high?power amplifier and switching circuit applications. Features ? High Current Capability ? IC Continuous = 60 Amperes ? DC Current Gain ? hFE = 15?100 @ IC = 50 Adc ? Low Collector?Emitter Saturation Voltage ?VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc ? Pb?Free Pa

文件：241.69 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體