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首頁 >MC140>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
MC14001BFELG	文件：171.86 Kbytes Page：14 Pages	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V 文件：171.86 Kbytes 頁數(shù)：14 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14001UB	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. 文件：216.43 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14001UBCP	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. 文件：216.43 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14001UBCPG	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. 文件：216.43 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14001UBD	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. 文件：216.43 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14001UBDG	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. 文件：216.43 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14001UBDR2	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. 文件：216.43 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14001UBDR2G	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. 文件：216.43 Kbytes 頁數(shù)：8 Pages	ONSEMI 安森美半導(dǎo)體	ONSEMI
MC14002B	文件：327.76 Kbytes Page：11 Pages	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered 文件：327.76 Kbytes 頁數(shù)：11 Pages	MOTOROLA 摩托羅拉	MOTOROLA
MC14002BCL	文件：327.76 Kbytes Page：11 Pages	B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered 文件：327.76 Kbytes 頁數(shù)：11 Pages	MOTOROLA 摩托羅拉	MOTOROLA

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替換型號

技術(shù)參數(shù)

Pb-free：
Pb
AEC Qualified：
A
Halide free：
H
PPAP Capablee：
P
Status：
Active
Type：
D-Type
Channels：
2
VCC Min (V)：
3
VCC Max (V)：
18
tpd Max (ns)：
150
IO Max (mA)：
2.25
Package Type：
SOIC-14

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
諦輝(北京/上海/青島 )電子科技有限公司	MC14013B	MOT	25+	DIP-14	18000	原廠直接發(fā)貨進口原裝	詢價
深圳市一線半導(dǎo)體有限公司	MC14013B	A	24+	b	4		詢價
深圳市歐立現(xiàn)代科技有限公司	MC14013B	ON	24+	SOP	6980	原裝現(xiàn)貨,可開13%稅票	詢價
深圳市毅創(chuàng)騰電子科技有限公司	MC14013B	MOTOROLA	23+	SOP14	3700	絕對全新原裝!現(xiàn)貨!特價!請放心訂購!	詢價
深圳市益百分電子有限公司	MC14013B	MOT	04+	SOP14	2890	全新原裝進口自己庫存優(yōu)勢	詢價
上海專毅電子科技有限公司	MC14013B	MOT	17+	SOP14	9988	只做原裝進口,自己庫存	詢價
上海意淼電子科技有限公司	MC14013B	MOT	23+	NA	3580	全新原裝假一賠十	詢價
深圳市佳鑫美電子科技有限公司	MC14013B	ON	25+	SOP	2987	絕對全新原裝現(xiàn)貨供應(yīng)!	詢價
深圳市華來深電子有限公司	MC14013B	MOT	23+	CDIP	8560	受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!	詢價
深圳市英卓爾科技有限公司	MC14013B	MOT	20+	SOP-14	2960	誠信交易大量庫存現(xiàn)貨	詢價

更多MC140供應(yīng)商更新時間2026-1-17 16:18:00

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