B-Suffix Series COMS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.\n\n1.?Supply Voltage Range = 3.0 Vdc to 18 Vdc\n2.?All Outputs Buffered\n

恩XP

Quad 2-Input NOR Gate

The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. ? Supply Voltage Range = 3.0 Vdc to 18 Vdc\n? All Outputs Buffered\n? Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.\n? Double Diode Protection on All Inputs Except: Triple Diode Protection on MC14011B and MC14081B\n? Pin-for-Pin Repla;

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安森美半導(dǎo)體

B-Suffix Series CMOS Gates

恩XP

Package：14-SOIC（0.154"，3.90mm 寬）；包裝：管件 類別：集成電路（IC） 門和反相器 描述：IC GATE NOR 4CH 2-INP 14SOIC

ONSEMI

安森美半導(dǎo)體

Package：14-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 門和反相器 描述：IC GATE NOR 4CH 2-INP 14-SOIC

ONSEMI

安森美半導(dǎo)體

Package：14-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 門和反相器 描述：IC GATE NOR 4CH 2-INP 14SOIC

ONSEMI

安森美半導(dǎo)體