CMOS 64K-BIT DUAL PORT SRAM

文件：992.09 Kbytes 頁數(shù)：19 Pages

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8M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Minimum 100,000 write/erase cycles ? Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K by

文件：349.52 Kbytes 頁數(shù)：29 Pages

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8M (x 8/x 16) FLASH MEMORY & 1M (x 8) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Minimum 100,000 write/erase cycles ? Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K by

文件：393.12 Kbytes 頁數(shù)：29 Pages

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8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Minimum 100,000 write/erase cycles ? Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.

文件：393.02 Kbytes 頁數(shù)：29 Pages

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富士通

8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Minimum 100,000 write/erase cycles ? Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K by

文件：348.31 Kbytes 頁數(shù)：29 Pages

FUJITSU

富士通

8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Minimum 100,000 write/erase cycles ? Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K by

文件：348.31 Kbytes 頁數(shù)：29 Pages

FUJITSU

富士通

8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Minimum 100,000 write/erase cycles ? Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K by

文件：348.31 Kbytes 頁數(shù)：29 Pages

FUJITSU

富士通

8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Minimum 100,000 write/erase cycles ? Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.

文件：393.02 Kbytes 頁數(shù)：29 Pages

FUJITSU

富士通

8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Minimum 100,000 write/erase cycles ? Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.

文件：393.02 Kbytes 頁數(shù)：29 Pages

FUJITSU

富士通

8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Minimum 100,000 write/erase cycles ? Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.

文件：393.02 Kbytes 頁數(shù)：29 Pages

FUJITSU

富士通