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                >MB8>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          MB84VA2105-10
          16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
          
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
■ FEATURES
? Power supply voltage of 2.7 to 3.6 V
? High performance
    100 ns maximum access time
? Operating Temperature
    –20 to +85°C
— FLASH MEMORY
? Minimum 100,000 write/erase cycles
? Sector erase architecture
    One 16 K byte,
          文件：401.25 Kbytes 頁數(shù)：29 Pages
          FUJITSU
          富士通
          

          MB84VA2106
          16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
          
■ FEATURES
? Power supply voltage of 2.7 to 3.6 V
? High performance
    100 ns maximum access time
? Operating Temperature
    –20 to +85°C
— FLASH MEMORY
? Minimum 100,000 write/erase cycles
? Sector erase architecture
    One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K 
          文件：423.38 Kbytes 頁數(shù)：29 Pages
          FUJITSU
          富士通
          

          MB84VA2106-10
          16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
          
■ FEATURES
? Power supply voltage of 2.7 to 3.6 V
? High performance
    100 ns maximum access time
? Operating Temperature
    –20 to +85°C
— FLASH MEMORY
? Minimum 100,000 write/erase cycles
? Sector erase architecture
    One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K 
          文件：423.38 Kbytes 頁數(shù)：29 Pages
          FUJITSU
          富士通
          

          MB84VA2107
          16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
          
■ FEATURES
? Power supply voltage of 2.7 to 3.6 V
? High performance
    100 ns maximum access time
? Operating Temperature
    –20 to +85°C
— FLASH MEMORY
? Minimum 100,000 write/erase cycles
? Sector erase architecture
    One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K 
          文件：423.38 Kbytes 頁數(shù)：29 Pages
          FUJITSU
          富士通
          

          MB84VA2107-10
          16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
          
■ FEATURES
? Power supply voltage of 2.7 to 3.6 V
? High performance
    100 ns maximum access time
? Operating Temperature
    –20 to +85°C
— FLASH MEMORY
? Minimum 100,000 write/erase cycles
? Sector erase architecture
    One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K 
          文件：423.38 Kbytes 頁數(shù)：29 Pages
          FUJITSU
          富士通
          

          MB84VB2000
          8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
          
■ FEATURES
? Contain 2 chips of MBM29LV800A, and each chip have separate CE.
? Power supply voltage of 2.7 to 3.6 V
? High performance
    100 ns maximum access time
? Operating Temperature
    –40 to +85°C
? Minimum 100,000 write/erase cycles
? Sector erase architecture
    One 16 K byte
          文件：314.39 Kbytes 頁數(shù)：28 Pages
          FUJITSU
          富士通
          

          MB84VB2000-10
          8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
          
■ FEATURES
? Contain 2 chips of MBM29LV800A, and each chip have separate CE.
? Power supply voltage of 2.7 to 3.6 V
? High performance
    100 ns maximum access time
? Operating Temperature
    –40 to +85°C
? Minimum 100,000 write/erase cycles
? Sector erase architecture
    One 16 K byte
          文件：314.39 Kbytes 頁數(shù)：28 Pages
          FUJITSU
          富士通
          

          MB84VB2001
          8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
          
■ FEATURES
? Contain 2 chips of MBM29LV800A, and each chip have separate CE.
? Power supply voltage of 2.7 to 3.6 V
? High performance
    100 ns maximum access time
? Operating Temperature
    –40 to +85°C
? Minimum 100,000 write/erase cycles
? Sector erase architecture
    One 16 K byte
          文件：314.39 Kbytes 頁數(shù)：28 Pages
          FUJITSU
          富士通
          

          MB84VB2001-10
          8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
          
■ FEATURES
? Contain 2 chips of MBM29LV800A, and each chip have separate CE.
? Power supply voltage of 2.7 to 3.6 V
? High performance
    100 ns maximum access time
? Operating Temperature
    –40 to +85°C
? Minimum 100,000 write/erase cycles
? Sector erase architecture
    One 16 K byte
          文件：314.39 Kbytes 頁數(shù)：28 Pages
          FUJITSU
          富士通
          

          MB84VD2002
          8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
          
■ FEATURES
? Power supply voltage of 2.7 to 3.6 V
? High performance
    100 ns maximum access time
? Operating Temperature
    –20 to +85°C
— FLASH MEMORY
? Simultaneous operations Read-while Erase or Read-while-Program
? Minimum 100,000 write/erase cycles
? Sector erase architecture
  
          文件：423.39 Kbytes 頁數(shù)：30 Pages
          FUJITSU
          富士通
          

          
            
          
		
        
          
            
          
                
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          產(chǎn)品屬性
          
            
          
            
            
            	
          • 產(chǎn)品編號：
            MB8
          • 制造商：
            Apex Tool Group
          • 類別：
            工具 > 專用工具
          • 包裝：
            散裝
          • 工具類型：
            彎頭撬杠
          • 描述：
            PRY BAR,8\
          
            
          
        
          
            
          供應(yīng)商型號品牌批號封裝庫存備注價格
          
                
          



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