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          首頁 >MB8>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MB84VD2002-10

          8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

          ■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Simultaneous operations Read-while Erase or Read-while-Program ? Minimum 100,000 write/erase cycles ? Sector erase architecture

          文件:423.39 Kbytes 頁數(shù):30 Pages

          FUJITSU

          富士通

          MB84VD2003

          8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

          ■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Simultaneous operations Read-while Erase or Read-while-Program ? Minimum 100,000 write/erase cycles ? Sector erase architecture

          文件:423.39 Kbytes 頁數(shù):30 Pages

          FUJITSU

          富士通

          MB84VD2003-10

          8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM

          ■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Simultaneous operations Read-while Erase or Read-while-Program ? Minimum 100,000 write/erase cycles ? Sector erase architecture

          文件:423.39 Kbytes 頁數(shù):30 Pages

          FUJITSU

          富士通

          MB84VD2008

          8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

          ■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Simultaneous operations Read-while Erase or Read-while-Program ? Minimum 100,000 write/erase cycles ? Sector erase architecture

          文件:393.43 Kbytes 頁數(shù):30 Pages

          FUJITSU

          富士通

          MB84VD2008-10

          8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

          ■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Simultaneous operations Read-while Erase or Read-while-Program ? Minimum 100,000 write/erase cycles ? Sector erase architecture

          文件:393.43 Kbytes 頁數(shù):30 Pages

          FUJITSU

          富士通

          MB84VD2009

          8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

          ■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Simultaneous operations Read-while Erase or Read-while-Program ? Minimum 100,000 write/erase cycles ? Sector erase architecture

          文件:393.43 Kbytes 頁數(shù):30 Pages

          FUJITSU

          富士通

          MB84VD2009-10

          8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

          ■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 100 ns maximum access time ? Operating Temperature –20 to +85°C — FLASH MEMORY ? Simultaneous operations Read-while Erase or Read-while-Program ? Minimum 100,000 write/erase cycles ? Sector erase architecture

          文件:393.43 Kbytes 頁數(shù):30 Pages

          FUJITSU

          富士通

          MB84VD21081

          16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

          ■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 85 ns maximum access time ? Operating Temperature ?25 to +85 °C ? Package 61-ball FBGA, 56-pin TSOP(I) 1. FLASH MEMORY ? Simultaneous Read/Write operations (dual bank) Miltiple devices available with differen

          文件:850.4 Kbytes 頁數(shù):55 Pages

          FUJITSU

          富士通

          MB84VD21081-85-PBS

          16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

          ■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 85 ns maximum access time ? Operating Temperature ?25 to +85 °C ? Package 61-ball FBGA, 56-pin TSOP(I) 1. FLASH MEMORY ? Simultaneous Read/Write operations (dual bank) Miltiple devices available with differen

          文件:850.4 Kbytes 頁數(shù):55 Pages

          FUJITSU

          富士通

          MB84VD21081-85-PTS

          16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

          ■ FEATURES ? Power supply voltage of 2.7 to 3.6 V ? High performance 85 ns maximum access time ? Operating Temperature ?25 to +85 °C ? Package 61-ball FBGA, 56-pin TSOP(I) 1. FLASH MEMORY ? Simultaneous Read/Write operations (dual bank) Miltiple devices available with differen

          文件:850.4 Kbytes 頁數(shù):55 Pages

          FUJITSU

          富士通

          產品屬性

          • 產品編號:

            MB8

          • 制造商:

            Apex Tool Group

          • 類別:

            工具 > 專用工具

          • 包裝:

            散裝

          • 工具類型:

            彎頭撬杠

          • 描述:

            PRY BAR,8\

          供應商型號品牌批號封裝庫存備注價格
          LAIRD
          25+
          射頻元件
          255
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          Apex
          1824+
          NA
          16
          加我QQ或微信咨詢更多詳細信息,
          詢價
          FUJITSU
          25+
          BGA320L
          1000
          強調現(xiàn)貨,隨時查詢!
          詢價
          SHARK
          23+
          QFP
          966
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          SEP東芝
          SOP-4
          20358
          原裝正品力挺實單~支持美金交易和專票,深圳原廠現(xiàn)貨~
          詢價
          FUJITSU/富士通
          11+
          TSSOP16
          29995
          進口原帶現(xiàn)貨
          詢價
          F
          24+
          QFP
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價
          MB
          89TP/QX
          BGA
          3
          只做原裝,現(xiàn)貨庫存
          詢價
          FUJITSU/富士通
          24+
          TSSOP20
          9600
          原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
          詢價
          MFF
          24+
          SOP
          41024
          原裝進口現(xiàn)貨假一賠百
          詢價
          更多MB8供應商 更新時間2021-9-14 10:50:00
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