Low Barrier Si Single

The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC?) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, whic ·Extremely Low Parasitic Capacitance and Inductance\n·RoHS Compliant\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC Construction with Polyimide Scratch Protection\n·Surface Mountable in Mi;

MACOM

Med. Barrier Si Single

The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC?) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, whic ·Extremely Low Parasitic Capacitance and Inductance\n·RoHS Compliant\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC Construction with Polyimide Scratch Protection\n·Surface Mountable in Mi;

MACOM

Package：模具；包裝：托盤 類別：分立半導體產(chǎn)品 二極管 - 射頻 描述：RF DIODE SCHOTTKY 5V 50MW DIE

MACOM Technology Solutions

Package：模具；包裝：托盤 類別：分立半導體產(chǎn)品 二極管 - 射頻 描述：RF DIODE SCHOTTKY 5V 50MW DIE

MACOM Technology Solutions