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          首頁 >MA4E2502>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          MA4E2502

          SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

          Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

          文件:115.68 Kbytes 頁數(shù):5 Pages

          MA-COM

          MA4E2502

          SURMOUNTTM Low, Medium, and High

          Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed

          文件:115.82 Kbytes 頁數(shù):5 Pages

          MA-COM

          MA4E2502

          SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes

          Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed

          文件:269.68 Kbytes 頁數(shù):4 Pages

          MACOM

          MA4E2502

          SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

          MACOM

          MA4E2502_V9

          SURMOUNTTM Low, Medium, and High

          Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed

          文件:115.82 Kbytes 頁數(shù):5 Pages

          MA-COM

          MA4E2502H

          SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes

          Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed

          文件:269.68 Kbytes 頁數(shù):4 Pages

          MACOM

          MA4E2502H

          SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

          Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

          文件:115.68 Kbytes 頁數(shù):5 Pages

          MA-COM

          MA4E2502H-1246

          SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

          Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

          文件:115.68 Kbytes 頁數(shù):5 Pages

          MA-COM

          MA4E2502H-1246T

          SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

          Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

          文件:115.68 Kbytes 頁數(shù):5 Pages

          MA-COM

          MA4E2502H-1246W

          SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

          Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

          文件:115.68 Kbytes 頁數(shù):5 Pages

          MA-COM

          技術(shù)參數(shù)

          • Vf(V):

            0.6500

          • Vb:

            3.00

          • Total Capacitance(pF):

            0.120

          • Dynamic Resistance(ohms):

            11.0

          • Junction Capacitance(pF):

            0.120

          • Package Category:

            Surface Mount Die

          • Package:

            ODS-1246

          供應(yīng)商型號品牌批號封裝庫存備注價格
          M/A-COM
          24+
          SMD
          5500
          M/A-COM專營品牌絕對進口原裝假一賠十
          詢價
          10
          優(yōu)勢庫存,全新原裝
          詢價
          M/A-Com
          1931+
          N/A
          500
          加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物
          詢價
          M/A-COM
          2447
          SMD
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          M/A-COM
          25+
          模具
          1675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          MACOM
          23+
          SMD
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          MACOM
          /ROHS.original
          NA
          10501
          射頻元件二極管-正納電子/ 原材料及元器件
          詢價
          M/A-COM
          22+
          NA
          1000
          只做原裝,價格優(yōu)惠,長期供貨。
          詢價
          M/A-COM
          23+
          WAFER
          13000
          原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
          詢價
          MACOM
          21+
          標(biāo)準(zhǔn)封裝
          2563
          專營優(yōu)勢訂貨渠道!
          詢價
          更多MA4E2502供應(yīng)商 更新時間2026-1-21 16:41:00
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