| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto 文件：115.68 Kbytes 頁數(shù)：5 Pages | MA-COM | MA-COM | ||
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed 文件：269.68 Kbytes 頁數(shù)：4 Pages | MACOM | MACOM | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto 文件：115.68 Kbytes 頁數(shù)：5 Pages | MA-COM | MA-COM | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto 文件：115.68 Kbytes 頁數(shù)：5 Pages | MA-COM | MA-COM | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto 文件：115.68 Kbytes 頁數(shù)：5 Pages | MA-COM | MA-COM | ||
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embed 文件：269.68 Kbytes 頁數(shù)：4 Pages | MACOM | MACOM | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto 文件：115.68 Kbytes 頁數(shù)：5 Pages | MA-COM | MA-COM | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto 文件：115.68 Kbytes 頁數(shù)：5 Pages | MA-COM | MA-COM | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto 文件：115.68 Kbytes 頁數(shù)：5 Pages | MA-COM | MA-COM | ||
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto 文件：115.68 Kbytes 頁數(shù)：5 Pages | MA-COM | MA-COM |
技術(shù)參數(shù)
- Vf(V)：
0.6500
- Vb：
3.00
- Total Capacitance(pF)：
0.120
- Dynamic Resistance(ohms)：
11.0
- Junction Capacitance(pF)：
0.120
- Package Category：
Surface Mount Die
- Package：
ODS-1246
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
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24+ |
SMD |
5500 |
M/A-COM專營品牌絕對進(jìn)口原裝假一賠十 |
詢價 | ||
10 |
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500 |
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物 |
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2447 |
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100500 |
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模具 |
1675 |
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50000 |
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10501 |
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M/A-COM |
22+ |
NA |
1000 |
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23+ |
WAFER |
13000 |
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21+ |
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2563 |
專營優(yōu)勢訂貨渠道! |
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