256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Con

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SANYO

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256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Con

文件：46.87 Kbytes 頁數(shù)：6 Pages

SANYO

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256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Con

文件：46.87 Kbytes 頁數(shù)：6 Pages

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Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM

Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high s

文件：165.88 Kbytes 頁數(shù)：9 Pages

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Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM

Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high s

文件：165.88 Kbytes 頁數(shù)：9 Pages

SANYO

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Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM

Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high s

文件：165.88 Kbytes 頁數(shù)：9 Pages

SANYO

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256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. Features ? Supply voltage range: 2.7 to 3.6 V ? Access time: 100 ns (maximum) ? Standby current: 0.8 μA (Ta ≤ 60°C) 4.0 μA (Ta ≤ 70°C

文件：46.87 Kbytes 頁數(shù)：6 Pages

SANYO

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256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. Features ? Supply voltage range: 2.7 to 3.6 V ? Access time: 100 ns (maximum) ? Standby current: 0.8 μA (Ta ≤ 60°C) 4.0 μA (Ta ≤ 70°C

文件：46.87 Kbytes 頁數(shù)：6 Pages

SANYO

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256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. Features ? Supply voltage range: 2.7 to 3.6 V ? Access time: 100 ns (maximum) ? Standby current: 0.8 μA (Ta ≤ 60°C) 4.0 μA (Ta ≤ 70°C

文件：46.87 Kbytes 頁數(shù)：6 Pages

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RED OVAL LAMP LED

文件：392.32 Kbytes 頁數(shù)：14 Pages

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