Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM

Overview The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an ultralow standby current. Features ? Supply voltage range: 2.7

文件：108.57 Kbytes 頁數(shù)：8 Pages

SANYO

三洋

256K (32768 words 8 bits) SRAM Control Pins: OE and CE

Overview The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. Control inputs inc

文件：49.68 Kbytes 頁數(shù)：7 Pages

SANYO

三洋

256K (32768 words X 8 bits) SRAM Control Pins: OE and CE

Overview The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. Control inputs inc

文件：60.19 Kbytes 頁數(shù)：7 Pages

SANYO

三洋

256K (32768 words X 8 bits) SRAM Control Pins: OE and CE

Overview The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. Control inputs inc

文件：60.19 Kbytes 頁數(shù)：7 Pages

SANYO

三洋

256K (32768 words X 8 bits) SRAM Control Pins: OE and CE

Overview The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. Control inputs inc

文件：60.19 Kbytes 頁數(shù)：7 Pages

SANYO

三洋

256K (32768 words X 8 bits) SRAM Control Pins: OE and CE

Overview The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature low-voltage operation, a low operating current drain, and an ultralow standby current. Control inputs inc

文件：60.19 Kbytes 頁數(shù)：7 Pages

SANYO

三洋

64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

文件：137.66 Kbytes 頁數(shù)：9 Pages

SANYO

三洋

64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

文件：137.66 Kbytes 頁數(shù)：9 Pages

SANYO

三洋

64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

文件：137.66 Kbytes 頁數(shù)：9 Pages

SANYO

三洋

64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins

Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

文件：137.66 Kbytes 頁數(shù)：9 Pages

SANYO

三洋