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          首頁 >LC35>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          LC3564BT-10

          64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins

          Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

          文件:137.66 Kbytes 頁數(shù):9 Pages

          SANYO

          三洋

          LC3564BT-70

          64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins

          Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features

          文件:137.66 Kbytes 頁數(shù):9 Pages

          SANYO

          三洋

          LC3564CM

          64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

          Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features ? Supply v

          文件:71.92 Kbytes 頁數(shù):11 Pages

          SANYO

          三洋

          LC3564CM-55U

          64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

          Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features ? Supply v

          文件:71.92 Kbytes 頁數(shù):11 Pages

          SANYO

          三洋

          LC3564CM-70U

          64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

          Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features ? Supply v

          文件:71.92 Kbytes 頁數(shù):11 Pages

          SANYO

          三洋

          LC3564CT

          64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

          Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features ? Supply v

          文件:71.92 Kbytes 頁數(shù):11 Pages

          SANYO

          三洋

          LC3564CT-55U

          64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

          Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features ? Supply v

          文件:71.92 Kbytes 頁數(shù):11 Pages

          SANYO

          三洋

          LC3564CT-70U

          64K (8192-word x 8-bit) SRAM with OE, CE1, and CE2 Control Pins

          Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. Features ? Supply v

          文件:71.92 Kbytes 頁數(shù):11 Pages

          SANYO

          三洋

          LC3564RM

          64K (8192 words x 8 bits) SRAM

          Overview The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery-operated equipment. Features ■ Supply voltage range: 2.0 to 3.6V ? 3V operation: 2.7 to 3.6V ? Battery

          文件:442.22 Kbytes 頁數(shù):10 Pages

          SANYO

          三洋

          LC3564RT-10LV

          64K (8192 words x 8 bits) SRAM

          Overview The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery-operated equipment. Features ■ Supply voltage range: 2.0 to 3.6V ? 3V operation: 2.7 to 3.6V ? Battery

          文件:442.22 Kbytes 頁數(shù):10 Pages

          SANYO

          三洋

          詳細(xì)參數(shù)

          • 型號:

            LC35

          • 制造商:

            SANYO

          • 制造商全稱:

            Sanyo Semicon Device

          • 功能描述:

            2048-word x 8bit COMS Syatic RAM

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          SANYO
          23+
          SSOP16
          5000
          原裝正品,假一罰十
          詢價(jià)
          SANYO
          23+
          DIP/24
          7000
          絕對全新原裝!100%保質(zhì)量特價(jià)!請放心訂購!
          詢價(jià)
          SANYO
          24+
          DIP24
          653
          詢價(jià)
          SANYO
          2000+
          DIP-24
          1536
          原裝現(xiàn)貨海量庫存歡迎咨詢
          詢價(jià)
          25+
          DIP
          2700
          全新原裝自家現(xiàn)貨優(yōu)勢!
          詢價(jià)
          SANYO
          25+23+
          New
          32123
          絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          SANYO/三洋
          23+
          DIP
          13000
          原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
          詢價(jià)
          SANYO
          25+
          DIP24
          500000
          行業(yè)低價(jià),代理渠道
          詢價(jià)
          SANYO
          DIP-24
          68500
          一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
          詢價(jià)
          SANYO/三洋
          23+
          DIP-24
          89630
          當(dāng)天發(fā)貨全新原裝現(xiàn)貨
          詢價(jià)
          更多LC35供應(yīng)商 更新時(shí)間2026-1-19 15:35:00
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