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首頁(yè) >K4E660412E>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
K4E660412E	文件：192.76 Kbytes Page：21 Pages	16M x 4bit CMOS Dynamic RAM with Extended Data Out This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t 文件：192.76 Kbytes 頁(yè)數(shù)：21 Pages	SAMSUNG 三星	SAMSUNG
K4E660412E-JI45	文件：192.76 Kbytes Page：21 Pages	16M x 4bit CMOS Dynamic RAM with Extended Data Out This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t 文件：192.76 Kbytes 頁(yè)數(shù)：21 Pages	SAMSUNG 三星	SAMSUNG
K4E660412E-JI50	文件：192.76 Kbytes Page：21 Pages	16M x 4bit CMOS Dynamic RAM with Extended Data Out This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t 文件：192.76 Kbytes 頁(yè)數(shù)：21 Pages	SAMSUNG 三星	SAMSUNG
K4E660412E-JI60	文件：192.76 Kbytes Page：21 Pages	16M x 4bit CMOS Dynamic RAM with Extended Data Out This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t 文件：192.76 Kbytes 頁(yè)數(shù)：21 Pages	SAMSUNG 三星	SAMSUNG
K4E660412E-JP45	文件：192.76 Kbytes Page：21 Pages	16M x 4bit CMOS Dynamic RAM with Extended Data Out This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t 文件：192.76 Kbytes 頁(yè)數(shù)：21 Pages	SAMSUNG 三星	SAMSUNG
K4E660412E-JP50	文件：192.76 Kbytes Page：21 Pages	16M x 4bit CMOS Dynamic RAM with Extended Data Out This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t 文件：192.76 Kbytes 頁(yè)數(shù)：21 Pages	SAMSUNG 三星	SAMSUNG
K4E660412E-JP60	文件：192.76 Kbytes Page：21 Pages	16M x 4bit CMOS Dynamic RAM with Extended Data Out This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t 文件：192.76 Kbytes 頁(yè)數(shù)：21 Pages	SAMSUNG 三星	SAMSUNG
K4E660412E-TI45	文件：192.76 Kbytes Page：21 Pages	16M x 4bit CMOS Dynamic RAM with Extended Data Out This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t 文件：192.76 Kbytes 頁(yè)數(shù)：21 Pages	SAMSUNG 三星	SAMSUNG
K4E660412E-TI50	文件：192.76 Kbytes Page：21 Pages	16M x 4bit CMOS Dynamic RAM with Extended Data Out This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t 文件：192.76 Kbytes 頁(yè)數(shù)：21 Pages	SAMSUNG 三星	SAMSUNG
K4E660412E-TI60	文件：192.76 Kbytes Page：21 Pages	16M x 4bit CMOS Dynamic RAM with Extended Data Out This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor mal or Low power) are optional features of t 文件：192.76 Kbytes 頁(yè)數(shù)：21 Pages	SAMSUNG 三星	SAMSUNG

詳細(xì)參數(shù)

型號(hào)：
K4E660412E
制造商：
SAMSUNG
制造商全稱：
Samsung semiconductor
功能描述：
16M x 4bit CMOS Dynamic RAM with Extended Data Out

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
上海市鑫鴻達(dá)電子	K4E660412E-TC50	Samsung	2022+		180	全新原裝貨期兩周	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	K4E660412E-TC60	SAMSUNG/三星	23+	TSOP32	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	K4E660412E-TC60	SAMSUNG/三星	25+	TSOP32	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	K4E660412E-TP50	SAMSUNG/三星	23+	TSOP50	13000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市威雅利發(fā)展有限公司	K4E660412E-TC60	SAMSUNG	12+	TSOP32	480	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市賽美科科技有限公司	K4E660412E-TC50	Samsung		NA	8560	一級(jí)代理原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	K4E660412E-TC60	SAMSUNG	23+	TSOP	8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	K4E660412E-TC60	SAMSUNG	23+	TSOP	7000		詢價(jià)
深圳市博中泰實(shí)業(yè)有限公司	K4E660412E-TC60	SAMSUNG/三星	24+	TSOP32	60000	全新原裝現(xiàn)貨	詢價(jià)
深圳市納艾斯科技有限公司	K4E660412E-TC60	SANSUM	24+	TSOP	80000	只做自己庫(kù)存全新原裝進(jìn)口正品假一賠百可開(kāi)13%增	詢價(jià)

更多K4E660412E供應(yīng)商更新時(shí)間2026-1-19 9:53:00

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