首頁 >K4E660812E>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
K4E660812E | 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件:190.72 Kbytes 頁數(shù):21 Pages | SAMSUNG 三星 | SAMSUNG | |
8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件:190.72 Kbytes 頁數(shù):21 Pages | SAMSUNG 三星 | SAMSUNG | ||
8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件:190.72 Kbytes 頁數(shù):21 Pages | SAMSUNG 三星 | SAMSUNG | ||
8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件:190.72 Kbytes 頁數(shù):21 Pages | SAMSUNG 三星 | SAMSUNG | ||
8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件:190.72 Kbytes 頁數(shù):21 Pages | SAMSUNG 三星 | SAMSUNG | ||
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet | Samsung 三星 | Samsung |
詳細參數(shù)
- 型號:
K4E660812E
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
8M x 8bit CMOS Dynamic RAM with Extended Data Out
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
23+ |
TSOP |
5000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
SAN |
SSOP |
2100 |
優(yōu)勢庫存 |
詢價 | |||
SAMSUNG |
24+ |
BGA |
1172 |
詢價 | |||
SAMSUNG |
25+ |
BGA |
2140 |
全新原裝!現(xiàn)貨特價供應 |
詢價 | ||
SAMSUNG |
23+ |
BGA |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
SAMSUNG/三星 |
2447 |
BGA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
SAMSUNG/三星 |
25+ |
BGA |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
SAMSUNG |
22+ |
BGA |
8000 |
原裝正品支持實單 |
詢價 | ||
SAMSUNG |
2023+環(huán)?,F(xiàn)貨 |
BGA |
4425 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務 |
詢價 |
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