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          首頁 >K4E660812E>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          K4E660812E

          8M x 8bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

          文件:190.72 Kbytes 頁數(shù):21 Pages

          SAMSUNG

          三星

          K4E660812E-JC/L

          8M x 8bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

          文件:190.72 Kbytes 頁數(shù):21 Pages

          SAMSUNG

          三星

          K4E660812E-JCSLASHL

          8M x 8bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

          文件:190.72 Kbytes 頁數(shù):21 Pages

          SAMSUNG

          三星

          K4E660812E-TC/L

          8M x 8bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

          文件:190.72 Kbytes 頁數(shù):21 Pages

          SAMSUNG

          三星

          K4E660812E-TCSLASHL

          8M x 8bit CMOS Dynamic RAM with Extended Data Out

          DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

          文件:190.72 Kbytes 頁數(shù):21 Pages

          SAMSUNG

          三星

          K4E660812E, K4E640812E

          8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet

          Samsung

          三星

          詳細參數(shù)

          • 型號:

            K4E660812E

          • 制造商:

            SAMSUNG

          • 制造商全稱:

            Samsung semiconductor

          • 功能描述:

            8M x 8bit CMOS Dynamic RAM with Extended Data Out

          供應商型號品牌批號封裝庫存備注價格
          SAMSUNG/三星
          23+
          TSOP
          5000
          一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
          詢價
          SAN
          SSOP
          2100
          優(yōu)勢庫存
          詢價
          SAMSUNG
          24+
          BGA
          1172
          詢價
          SAMSUNG
          25+
          BGA
          2140
          全新原裝!現(xiàn)貨特價供應
          詢價
          SAMSUNG
          23+
          BGA
          8560
          受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
          詢價
          SAMSUNG/三星
          2447
          BGA
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          SAMSUNG/三星
          23+
          BGA
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          SAMSUNG/三星
          25+
          BGA
          10000
          原裝現(xiàn)貨假一罰十
          詢價
          SAMSUNG
          22+
          BGA
          8000
          原裝正品支持實單
          詢價
          SAMSUNG
          2023+環(huán)?,F(xiàn)貨
          BGA
          4425
          專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
          詢價
          更多K4E660812E供應商 更新時間2026-1-18 11:09:00
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