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首頁 >K31>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
K310L	文件：472.03 Kbytes Page：3 Pages	LOW VF SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c 文件：472.03 Kbytes 頁數(shù)：3 Pages	SY 順燁電子	SY
K310V	文件：126.66 Kbytes Page：2 Pages	Surface Mounted Schottky Barrier Rectifiers Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Built-in strain relief,ideal for automated placement Low reverse leakage High forward surge current capability AEC-Q 101 qualified 文件：126.66 Kbytes 頁數(shù)：2 Pages	GWSEMI 唯圣電子	GWSEMI
K3113	文件：145.2 Kbytes Page：8 Pages	SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3113 is N-channel DMOSFET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ?Low on-state resistance RDS(on)= 4.4 ?MAX. (VGS= 10 V, ID= 1.0 文件：145.2 Kbytes 頁數(shù)：8 Pages	NEC 瑞薩	NEC
K3113B	文件：202.85 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A) 文件：202.85 Kbytes 頁數(shù)：8 Pages	NEC 瑞薩	NEC
K3113B-ZK-E1-AY	文件：1.0869 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.0869 Mbytes 頁數(shù)：9 Pages	VBSEMI 微碧半導(dǎo)體	VBSEMI
K3113-Z	文件：1.07693 Mbytes Page：9 Pages	Power MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.07693 Mbytes 頁數(shù)：9 Pages	VBSEMI 微碧半導(dǎo)體	VBSEMI
K3114	文件：1.08737 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08737 Mbytes 頁數(shù)：9 Pages	VBSEMI 微碧半導(dǎo)體	VBSEMI
K3114B	文件：1.08719 Mbytes Page：9 Pages	N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08719 Mbytes 頁數(shù)：9 Pages	VBSEMI 微碧半導(dǎo)體	VBSEMI
K3115	文件：1.10767 Mbytes Page：10 Pages	N-Channel 650V (D-S) Power MOSFET FEATURES ? Low figure-of-merit (FOM) Ron x Qg ? Low input capacitance (Ciss) ? Reduced switching and conduction losses ? Ultra low gate charge (Qg) ? Avalanche energy rated (UIS) APPLICATIONS ? Server and telecom power supplies ? Switch mode power supplies (SMPS) ? Power factor correction 文件：1.10767 Mbytes 頁數(shù)：10 Pages	VBSEMI 微碧半導(dǎo)體	VBSEMI
K3115B	文件：351.31 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low gate charge QG = 21 nC 文件：351.31 Kbytes 頁數(shù)：9 Pages	RENESAS 瑞薩	RENESAS

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技術(shù)參數(shù)

封裝：
UMT6
包裝數(shù)量：
3000
最小獨(dú)立包裝數(shù)量：
3000
包裝形態(tài)：
Taping
RoHS：
Yes
Package Code：
SOT-363
JEITA Package：
SC-88
Number of terminal：
6
Polarity：
Nch+Nch
Drain-Source Voltage VDSS[V]：
60
Drain Current ID[A]：
0.25
RDS(on)[Ω] VGS=2.5V(Typ.)：
3
RDS(on)[Ω] VGS=4V(Typ.)：
2.3
RDS(on)[Ω] VGS=4.5V(Typ.)：
2.1
RDS(on)[Ω] VGS=10V(Typ.)：
1.7
RDS(on)[Ω] VGS=Drive (Typ.)：
3
Power Dissipation (PD)[W]：
0.15
Drive Voltage[V]：
2.5
Mounting Style：
Surface mount
Storage Temperature (Min.)[°C]：
-55
Storage Temperature (Max.)[°C]：
150
Package Size [mm]：
2x2.1 (t=1)

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
中天科工半導(dǎo)體（深圳）有限公司	UM6K31N	ROHM/羅姆	25+	SOT-363	41250	ROHM/羅姆全新特價(jià)UM6K31N即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨	詢價(jià)
深圳誠(chéng)思涵科技有限公司	UM6K31N	ROHM	16+	SOT-363	3500	進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!	詢價(jià)
深圳市河鋒鑫科技有限公司	UM6K31N	ROHM/羅姆	2019+PB	SOT-363	3500	原裝正品可含稅交易	詢價(jià)
深圳市振宏微科技有限公司	UM6K31N	ROHM	23+	SOT-363	3500		詢價(jià)
深圳市粵駿騰電子科技有限公司	UM6K31N	ROHM/羅姆	24+	SOT-363	98000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市斌騰達(dá)科技有限公司	UM6K31N	ROHM	21+	SOT-363	21000	一級(jí)代理進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)	詢價(jià)
深圳市宇創(chuàng)芯科技有限公司	UM6K31N	ROHM/羅姆	24+	SOT-363	9600	原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	UM6K31N	ROHM/羅姆	23+	SOT-363	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市英瑞爾電子科技有限公司	UM6K31N	ROHM	24+	SOT-363	3500	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市威雅利發(fā)展有限公司	UM6K31N	羅姆	1712;2021	SOT363	500	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)

更多K31供應(yīng)商更新時(shí)間2026-1-20 14:14:00

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