MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES ? Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

文件：202.85 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

N-Channel 650 V (D-S) MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.0869 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Power MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.07693 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE ? High DC Current Gain : hFE=600 ~ 3600. ? Small Package.

文件：296.88 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

High Efficiency Boost 2P6S/3P6S LED Driver

Features ? Drive up to 6 LEDs per string ? KTD3112: 2 strings, 12 LEDs total ? KTD3113: 3 strings, 18 LEDs total ? High efficiency: up to 90 ? High frequency step-up converter (800kHz) ? Wide input range: 2.7V to 5.5V ? Integrated 30V Power MOSFET ? Internal compensation and soft start

文件：656.58 Kbytes 頁數(shù)：13 Pages

KINETIC

芯凱電子